STTR Phase I: Broadband Silicon-Germanium Based Quantum Dot Materials

该奖项是根据2009年美国复苏和再投资法案（公法111-5）资助的。这个小企业技术转让第一阶段项目是开发硅锗基量子点材料，凭借其组成和尺寸分布，在宽范围的光波长下工作。这种创新材料将允许在硅上开发具有单结技术的广泛吸收太阳能电池，或开发用于电信应用的高效宽带光电探测器。这种材料技术的成功商业化将提高高速电信和用于能量转换的光伏器件领域的性能。用于电信的宽带检测器技术可能是一个非常大的市场，因为这种材料将允许一种检测技术有效地覆盖许多波长，并且可以与现有的硅IC技术集成。对于在光伏工业中的使用，开发高效的可见光至近红外吸收材料技术将是重要的，因为可以降低成本。

This award is funded under the American Recovery and Reinvestment Act of 2009 (Public Law 111-5).This Small business Technology Transfer Phase I project is to develop silicon-germanium based quantum dot materials that operate over a wide range of optical wavelengths by virtue of their composition and size distribution. This innovative material will allow the development of broadly absorbing solar cells on silicon with a single junction technology or the development of highly efficient broadband photo-detectors for telecommunications applications. Successful commercialization for this materials technology would improve performance in the areas of high speed telecommunications, and photovoltaic devices for energy conversion. Broadband detector technology for telecommunications could be a very large market since this material would allow for one detection technology to efficiently cover many wavelengths, as well as being integratable with existing silicon IC technology. For use in the photovoltaic industry, the development of a highly efficient visible to near-IR absorbing materials technology would be significant since costs can be lowered.