Spintronics in novel low-dimensional semiconductors

该项目致力于对降维半导体突现结构中的自旋依赖现象进行理论研究。将被研究的系统包括：(I)基于HgTe/HgCdTe量子阱和BISE(Sb，Te)系统的无间隙半导体结构，包括拓扑绝缘体相；(Ii)稀磁半导体材料；(Iii)与非传统晶体取向有关的低空间对称性的量子阱；以及(Iv)具有自旋-电荷分离的相关一维系统中的自旋效应(最突出的实现是半导体纳米结构和碳纳米管)。在探索自旋输运和自旋弛豫现象的同时，我们将特别关注电子相互作用，它对这些低维系统的物理产生至关重要的影响。人们对这些新材料的兴趣还受到它们在纳米电子学和自旋电子学方面的应用前景的推动。这是与A.F.约菲物理技术研究所(俄罗斯圣彼得堡)在DFG-RFBR协议框架内的一个合作项目。Ioffe研究所科学家是半导体纳米结构(特别是包括光学现象以及自旋输运和驰豫)领域的世界领先专家，他们的参与对该项目至关重要。

The project is devoted to theoretical investigations of spin-dependent phenomena in emergent semiconductor structures of reduced dimensionality. The systems to be studied include (i) gapless semiconductor structures based on HgTe/HgCdTe quantum wells and BiSe(Sb,Te) systems, including topological insulator phases, (ii) diluted magnetic semiconductor materials, (iii) quantum wells of low spatial symmetry related to unconventional crystallographic orientation; and (iv) spin effects in correlated 1D systems with spin-charge separation (most prominent realizations being semiconductor nanostructures and carbon nanotubes). While exploring spin transport and spin relaxation phenomena, we will pay particular attention to electron interaction, which crucially affects the physics of these low-dimensional systems. The interest to these novel materials is additionally motivated by perspectives of their applications for nanoelectronics and spintronics. This is a cooperation project with A.F. Ioffe Physical-Technical Institute (St. Petersburg, Russia) in the framework of the DFG-RFBR agreement. Participation of the Ioffe Institute scientists who are worldleading experts in the field of semiconductor nanostructures (including, in particular, optical phenomena as well as spin transport and relaxation) is crucially important for the Project.