Collaborative Research: Vertical GaN Nanostructures on Silicon Fins for Power Electronics and Future Integration with Silicon Technology

概述：本项目的目标是在硅衬底上开发III族氮化物鳍式场效应晶体管的创新研究。该方法利用具有（111）取向侧壁的硅支撑鳍，用于使用金属有机气相外延的对称III族氮化物异质结构的选择性区域生长。材料生长，纳米加工，模拟和建模，以及电气测试将进行利用工程鳍能带结构的巨大灵活性，导致前所未有的电子性能控制。智力优点：该提案提出了变革性的想法，导致硅平台上的高功率晶体管的新颖和有效的电子器件架构。拟议的创新将解决与材料生长，纳米和微米级设计和宽带隙半导体晶体管的开发，以及结构化硅衬底上的鳍结构的制造原理相关的基础和应用研究。III族氮化物/Si鳍片将展示新的能带结构物理，将用于创新的增强型器件。更广泛的影响：无线通信、DC功率转换和成像中的高功率射频调制需要高效晶体管。纳米级生物和化学传感器用于环境监测、医疗诊断和国土安全。芯片级微型电子器件的常关态晶体管对未来很重要？绿色能源？应用.该提案将提高德克萨斯州A M和德克萨斯理工大学的研究生和本科生教育机会，加强每个机构的多样性，导致REU补充请求，并启动一项针对在科学和工程领域人口统计学上代表性不足的初中和高中学生的计划。

Overview: The objective of this project is innovative research for developing III-nitride fin field-effect transistors on silicon substrate. The approach utilizes silicon support fins with (111)-oriented sidewalls for selective area growth of symmetric III-nitride heterostructures using metallorganic vapor phase epitaxy. Materials growth, nanofabrication, simulation and modeling, and electrical tests will be carried out to exploit the enormous flexibility in engineering the fin energy band structure, leading to unprecedented control of electronic properties. Intellectual merit: This proposal presents transformative ideas, leading to novel and effective electronic device architectures for high-power transistors on a silicon platform. The proposed innovations will address fundamental and applied research related to materials growth, nano- and micro-scale design and development of wide band gap semiconductor transistors, and fabrication principles for fin architectures on structured silicon substrates. The III-nitride/Si fins will exhibit new band structure physics that will be exploited for innovative enhancement-mode devices. Broader impacts: Efficient transistors are needed for high power radio-frequency modulation in wireless communications, DC power conversion, and imaging. Nanoscale biological and chemical sensors are needed for environmental monitoring, medical diagnostics, and homeland security. Normal-off state transistors for chip-scale miniature electronics are important for future ?green energy? applications. This proposal will enhance graduate and undergraduate education opportunities at Texas A&M and Texas Tech Universities and, strengthen diversity at each institution, lead to REU supplement requests, and initiate a program targeting junior and senior high students who are demographically underrepresented in science and engineering.