Resistance switching in electrodeposited metal oxide thin films and superlattices

非技术描述：固态存储器在数码相机、智能手机、平板电脑和最新的笔记本电脑中无处不在。随着设备尺寸的不断缩小，非易失性存储器成为一个限制因素；因此，对高可扩展存储设备的需求不断增加。这项研究的重点是一种新兴的紧凑型技术，称为电阻随机存取存储器（RRAM），该技术基于磁铁矿和氧化铋等金属氧化物材料的电阻开关。电沉积是一种简单而廉价的加工方法。除了为数据存储和检索开辟新的可能性之外，这项研究项目还具有强大的教育影响。材料夏令营的学生们发现为RRAM生产材料是一件令人兴奋的事情，因为他们有依赖于固态存储器的手持设备。技术细节：研究的重点是电沉积金属氧化物薄膜和具有电阻开关的超晶格。这些材料的一个可能应用是固态存储器的RRAM。研究中的材料具有多种电阻状态，可以通过简单地改变施加的电压来访问，这为多比特数据存储和检索开辟了新的可能性。具体的任务是i)磁铁矿/钴铁氧体系统中超晶格的电沉积，ii)使用聚焦离子束制造纳米级触点和交叉点结构，iii)纳米结构多晶薄膜中的电阻开关，iv)电沉积磁铁矿超晶格和薄膜中电阻开关机制的研究，v) δ - bi2o3电沉积薄膜中的电阻开关。本项目强调电沉积薄膜的纳米结构与其电阻开关行为之间的关系。

NON-TECHNICAL DESCRIPTION: Solid-state memory is ubiquitous in digital cameras, smart cell phones, tablet computers, and the latest laptop computers. As device size continues to shrink, the non-volatile memory becomes a limiting factor; consequently there is increasing demand for highly-scalable memory devices. This research focuses on an emerging and compact technology known as resistance random access memory (RRAM) that is based on resistance switching in metal oxide materials such as magnetite and bismuth oxide. The materials are deposited by electrodeposition, a simple and inexpensive processing method. In addition to opening up new possibilities for data-storage and retrieval, this research project has strong educational broader impacts. Students at the Materials Camp find producing materials for RRAM to be exciting because they have hand-held devices that depend on solid-state memory. TECHNICAL DETAILS: The research focuses on the electrodeposition of metal oxide films and superlattices that exhibit resistance switching. A possible application of these materials is RRAM for solid-state memory. The materials in the study have multiple resistance states that can be accessed by simply varying the applied voltage, opening up new possibilities for multi-bit data storage and retrieval. Specific tasks are i) electrodeposition of superlattices in the magnetite/cobalt ferrite system, ii) using a focused ion beam to fabricate nanoscale contacts and cross-point architectures, iii) resistance switching in nanostructured polycrystalline films, iv) study of the mechanism of resistance switching in electrodeposited magnetite superlattices and films, and v) resistance switching in electrodeposited films of delta-Bi2O3. The project emphasizes correlating the nanostructure of the electrodeposited films with their resistance switching behavior.