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Integrating Flash and Phase Change Memory into Memory/Storage Hierarchies for Enhancing High-End and Data-Intensive Computing

Integrating Flash and Phase Change Memory into Memory/Storage Hierarchies for Enhancing High-End and Data-Intensive Computing
将闪存和相变存储器集成到内存/存储层次结构中以增强高端和数据密集型计算
批准号:
1127829
负责人:
David Du
金额:
$19.94万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2011
资助国家:
美国
项目状态:
已结题
起止时间:
2011-08-15 至 2014-07-31

项目摘要

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中文摘要
翻译
智能存储研究中心(CRIS)提案#1127829本提案为明尼苏达大学智能存储研究中心(CRIS)寻求资助。双城。基础研究的资金申请由NSF批准的征求授权,NSF 10-601。本次招标邀请I/ ucrc提交支持行业定义基础研究的提案。从硬盘驱动器(HDD)迁移到由NAND闪存组成的固态驱动器(sdd)被认为是满足新兴数据存储系统访问速度、能源、可靠性和移动性要求的必要条件。提议的工作旨在研究NAND闪存和相变存储器(PCM)集成的架构。一种高度可扩展的新技术,具有改进的性能(I/O、擦除、写入持久性)。拟议的研究计划旨在解决这两种技术集成所特有的设计问题,旨在开发新的架构、算法和分析工具,从而得出创新的解决方案,使基于闪存的设备能够在高性能、低功耗计算机系统和数据密集型应用中使用。NAND-PCM架构有潜力提高高端和数据密集型计算的性能,同时满足日益增长的降低能耗的需求。拟议研究的结果有可能对美国计算和数据系统部门产生重大影响。提议的努力已经获得了一个中心成员洛斯阿拉莫斯国家实验室的支持,以执行提议的工作。该行业部门将进一步受益于通过中心成员传播的成果,并将中心的项目组合扩展到该领域。计划为研究生和本科生提供机会,包括那些代表性不足的群体。
英文摘要
Center for Research on Intelligent Storage (CRIS)Proposal #1127829This proposal seeks funding for the Center for Research on Intelligent Storage (CRIS) at the University of Minnesota ? Twin Cities. Funding Requests for Fundamental Research are authorized by an NSF approved solicitation, NSF 10-601. The solicitation invites I/UCRCs to submit proposals for support of industry-defined fundamental research. Migration away from Hard Disk Drives (HDD) to solid state drives (SDDs) composed of NAND flash memory is viewed as essential to meeting access speed, energy, reliability, and mobility requirements of emerging data storage systems. The proposed effort seeks to investigate architectures for the integration of NAND flash and Phase Change Memory (PCM) ? a new technology that is highly scalable with improved performance (I/O, erase, write endurance). The proposed research plans to address design issues peculiar to the integration of these two technologies with the intent of developing new architectures, algorithms and analytic tools with which to arrive at innovative solutions that will enable use of flash-based memory devices in high-performance and low-power computer systems and data intensive applications.NAND-PCM architectures have the potential to enhance the performance of high-end as wella s data-intensive computing while addressing increasing the increasing need to reduce energy consumption. Outcomes of the proposed research have the potential for major impact in the US computing and data systems sector. The proposed effort has garnered support from one center member, Los Alamos Nation Lab, for execution of the proposed work. This industry sector will further benefit via dissemination of the results through the Center membership and the extension of the centers project portfolio into this area. Opportunities are planned for graduate and undergraduate students including those in underrepresented groups.
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