CSR:Small: Efficient FTL Buffer Management for High-Performance Solid State Drives

CSR:Small：适用于高性能固态硬盘的高效 FTL 缓冲区管理

• 批准号: 1115471
• 负责人: David Du
• 金额: $ 13万
• 依托单位: University of Minnesota-Twin Cities
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2011
• 资助国家: 美国
• 起止时间: 2011-08-15 至 2014-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1115471&HistoricalAwards=false
• 关键词: CSR; Small; Efficient; FTL; Buffer

In the past several decades, the access time of magnetic disks has improved about 8% per year while processor speeds have improved at an astounding 60% per year. The tremendous performance disparity between disks and processors means that many large-scale applications are limited by the performance of the underlying storage systems. Flash memory is an emerging storage technology that shows tremendous promise to compensate for the limitations of magnetic disk-based storage devices. A key advantage of flash-based storage is that its read-write performance is much better than disk. Flash memory-based storage like solid state drives provides fast random access to all areas of the device. On the other hand, writes to flash memory are much slower than reads. Furthermore, writes to flash must be preceded by an erase unless a clean block is used, and the number of erase cycles is limited. To overcome these drawbacks, a Flash Translation Layer (FTL) is designed to provide dynamic address mapping between logical addresses to physical addresses, wear-leveling, garbage collection, and buffer caching. A small memory buffer in FTL is used to perform these functions. This project will focus on techniques to use the least amount of memory buffer to achieve high performance and low energy consumption. The research tasks include efficient heuristics for hot and cold data classification and how to reduce memory requirement for wear-leveling and garbage collection. This effort will improve the fundamental understanding of flash memory and will extend the capability of flash memory to support many critical applications.

在过去的几十年中，磁盘的访问时间每年提高了约8％，而处理器速度的提高为每年60％。磁盘和处理器之间的巨大性能差异意味着许多大规模应用受到基础存储系统的性能的限制。闪存是一种新兴的存储技术，它显示出巨大的希望，可以弥补基于磁盘的存储设备的局限性。基于Flash的存储的关键优势是其读写性能比磁盘要好得多。基于闪存的存储（例如固态驱动器）可快速随机访问设备的所有区域。另一方面，写入闪存的写作要比阅读要慢得多。此外，除非使用干净的块，并且擦除循环的数量受到限制，否则必须在闪光灯上写入flash。为了克服这些弊端，闪光平移层（FTL）旨在提供逻辑地址之间的动态地址映射到物理地址，磨损水平，垃圾收集和缓冲区缓冲区。 FTL中的小内存缓冲区用于执行这些功能。 该项目将集中于使用最少的内存缓冲区来实现高性能和低能消耗的技术。研究任务包括用于热和冷数据分类的有效启发式方法，以及如何减少磨损水平和垃圾收集的内存需求。这项工作将提高对闪存的基本理解，并扩展闪存的能力以支持许多关键应用程序。