2012 Defects in Semiconductors Gordon Research Conference at the University of New England in Biddeford, Maine from August 12-17, 2012

这笔赠款为2012年8月12-17日在缅因州比德福德的新英格兰大学举行的关于半导体缺陷的戈登研究会议提供了部分支持。这次会议聚集了学术界、工业界和国家实验室的顶尖专家，讨论块状和纳米结构半导体材料系统中的缺陷问题。这次会议有助于进一步发展和推进对缺陷及其在块体、薄膜和纳米级半导体和器件结构的结构、电子、光学和磁性中的作用的基本认识。点缺陷和扩展缺陷涉及当前感兴趣的广泛的电子材料，包括宽带隙半导体、金属氧化物、碳基半导体(例如，钻石、石墨烯)、有机半导体、光伏/太阳能电池材料以及其他类似感兴趣的材料。NSF的资金主要用于为研究生、博士后和初级教职员工提供财政支持，特别是来自代表性不足群体的资助。

This grant provides partial support for Gordon Research Conference on Defects in Semiconductors at the University of New England in Biddeford, Maine on August 12-17, 2012. The conference brings together leading experts from academia, industry, and national laboratories on the topic of defects in bulk and nanostructured semiconductor material systems. The meeting contributes to the further development and advancement of the fundamental understanding of defects and their roles in the structural, electronic, optical, and magnetic properties of bulk, thin film, and nanoscale semiconductors and device structures. Point and extended defects are addressed in a broad range of electronic materials of current interest, including wide bandgap semiconductors, metal-oxides, carbon-based semiconductors (e.g., diamond, graphene), organic semiconductors, photovoltaic/solar cell materials, and others of similar interest. The NSF funds are used mainly to provide financial support for graduate students, postdocs, and junior faculty members, especially from under-represented groups.