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Diluted Magnetic Germanium Nanowire-Based Nonvolatile Transpinor

Diluted Magnetic Germanium Nanowire-Based Nonvolatile Transpinor
基于稀磁锗纳米线的非易失性 Transpinor
批准号:
1308358
负责人:
Kang Wang
金额:
$36.0万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2013
资助国家:
美国
项目状态:
已结题
起止时间:
2013-07-01 至 2016-06-30

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中文摘要
翻译
本项目的目标是设计和构建一种新型的非易失性翻转装置,该装置使用稀释的磁性锗纳米线,具有电场控制的顺磁性到铁磁性相变。与传统的硅互补金属氧化物半导体器件和其他先前提出的自旋场效应晶体管相比,该器件具有许多独特的优点,包括独特的非易失性、附加功能、更低的功耗和更快的信息处理开关。智力上的优点是,所提出的翻转装置调用了新的量子物理学,使在室温下控制稀释磁性半导体的铁磁相变(集体自旋)成为可能。此外,利用电场实现相变的控制将使功耗降低。更广泛的影响是创造新的知识,并提供对纳米结构中载流子介导的铁磁性和自旋输运的深入理解,从而为室温自旋电子器件建立一个新的平台。这种影响将是变革性的,因为它涉及到新型功能磁性纳米材料和物理学的发现,这可能会改变半导体技术,通过引入超越传统缩放互补金属氧化物半导体器件的新型高性能室温自旋电子器件,将自旋电子学集成到形成非易失性系统。它将建立新的低能耗电子技术,建立新的市场和经济。该项目还提供了一个独特的多学科研究和教育机会,将自旋电子学纳入课程
英文摘要
The objective of this program is to design and build a novel nonvolatile transpinor device using a diluted magnetic germanium nanowire with an electric field-controlled paramagnetism-to-ferromagnetism phase transition. Compared with conventional silicon complementary metal-oxide-semiconductor devices and other previously proposed spin field-effect transistors, the proposed transpinor device provides many unique advantages, including unique nonvolatility, added functionalities, lower power dissipation and faster switching for information processing.The intellectual merit is that the proposed transpinor device invokes new quantum physics to enable the control of the ferromagnetic phase change (collective spins) in diluted magnetic semiconductor at room temperature. Additionally, the use of electic field to achieve the control of phase transition will enable the reduction of power dissipation. The broader impacts are to create new knowledge and to provide an in-depth understanding of the carrier-mediated ferromagnetism and spin transport in nanostructures, therefore establishing a new platform for room-temperature spintronic devices. The impact will be transformative because it involves the discovery of novel functional magnetic nanomaterials and physics, which may tranform semiconductor technology with the integration of spintronics to form nonvolatile systems by introducing new kinds of high-performance room-temperature spin-based electronic devices beyond the traditional scaled complementary metal-oxide-semiconductor devices. It will establish new low-energy electronics technology, and new market and economy. The program also offers a unique multi-disciplinary research and educational opportunity to incorporate spintronics into curriculum
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