High efficiency Schottky barrier silicon solar cells

项目：陶梦，提案号：1336297机构：亚利桑那州立大学标题：高效肖特基势垒硅太阳能电池为了将光伏发电的安装成本降低到1美元/瓦以下，2012年国际光伏技术路线图（ITRPV）要求采用更薄的硅衬底，减少每个电池的银金属化，减少前后的复合损耗，到2020年晶体硅电池的效率在20%到24%之间。该路线图强调需要适合在薄晶圆上实现高效率的新电池概念。肖特基势垒结电池可以提供简化的低温处理和高效率，当费米水平钉住在金属-半导体界面被阻止。直到最近，知识和处理技术的出现才导致测量出创纪录的肖特基势垒高度，这反映了金属和硅之间已知的功函数差异。因此，有可能探索这些技术的应用，以创造效率大于20%的交叉式后点接触肖特基势垒硅太阳能电池，并以与大批量太阳能电池制造工艺兼容的实验室电池为目标。该项目将阐明金属-硅界面的原子尺度修饰如何影响载流子输运和表面复合速度，并通过实验和设备建模确定如何将这些知识转化为具有简化制造工艺的高效肖特基势垒太阳能电池。这是一种新的太阳能电池结构，人们已经设想了几十年，但直到最近，科学技术的进步才使其得以展示。该研究是材料科学和电气工程的结合，在学术界和工业界都具有重要意义。简化单结硅太阳能电池的演示将有助于使硅光伏成为世界解决方案的主要部分。能源问题。与亚利桑那州立大学的量子能源和可持续太阳能技术（QESST）的NSF-DOE ERC一起，该项目将通过我们的行业合作伙伴为行业投入和技术转让提供明确的途径。此外，该项目还将做出有针对性的努力，增加美国印第安人在科学和工程领域的代表性，并提高亚利桑那州当地部落对光伏技术的认识。

PI: Tao, MengProposal Number: 1336297Institution: Arizona State UniversityTitle: High efficiency Schottky barrier silicon solar cellsTo decrease the costs of photovoltaics-generated electricity below $1/Wp installed, the 2012 International Technology Roadmap for Photovoltaics (ITRPV) calls for thinner silicon substrates, less silver metallization per cell, and reduced recombination losses at the front and rear, with cell efficiencies for crystalline silicon between 20% and 24% by 2020. The roadmap emphasizes the need for new cell concepts suitable for achieving high efficiencies on thin wafers. Schottky barrier junction cells can provide both simplified low temperature processing and high efficiencies when Fermi level pinning at the metal-semiconductor interface is prevented. Only recently have both knowledge and processing techniques emerged that result in measured record-high Schottky barrier heights that reflect the known work function differences between metals and silicon. It therefore becomes possible to explore application of these techniques to create an interdigitated back point contact Schottky barrier based silicon solar cell with efficiency greater than 20% and target demonstrating laboratory cells with a process compatible with high volume solar cell manufacturing. This project will elucidate how the atomic-scale modification of the metal-silicon interface affects carrier transport and surface recombination velocity and determining through both experiments and device modeling how this knowledge can be translated into a high efficiency Schottky barrier solar cell with a simplified manufacturing process. This is a new solar cell structure which has been envisioned for decades, but only recently the science and technology have advanced to enable its demonstration. The research is a blend of materials science and electrical engineering with importance in both academia and industry.The demonstration of a simplified single junction silicon solar cell will help enable silicon photovoltaics to become a major part of the solution to the world?s energy problem. In conjunction with the NSF-DOE ERC for Quantum Energy and Sustainable Solar Technologies (QESST) at ASU, this project will have a clear path for industry input and technology transfer through our industry partners. In addition the project will make a targeted effort to increase the representation of American Indians in science and engineering as well as increase the awareness of local Arizona tribes on photovoltaic technologies.