"Realization of Schottky-limit at metal-semiconductor interfaces and its application to electron devices"
"Realization of Schottky-limit at metal-semiconductor interfaces and its application to electron devices"
批准号:
09450118
负责人:
HASEGAWA Hideki
金额:
$9.09万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (B)
财政年份:
1997
资助国家:
日本
项目状态:
已结题
起止时间:
1997 至 1998
中文摘要
本研究的目的是实现“肖特基极限”的各种金属化合物半导体(M-S)接口,通过消除费米能级钉扎使用原位电化学过程,并将此过程应用到各种设备。1)一种新的原位电化学工艺使我们能够制备出InP、GaAs和GaN的肖特基势垒高度与金属功函数密切相关的肖特基接触,特别是Pt/n-InP和Pt/n-GaAs的肖特基势垒高度分别大于0.86和0.92eV。结果表明,原位电化学方法制备的M-S界面没有氧化物夹层,没有界面应力,也没有工艺诱导的缺陷能级。进一步沉积并不增加颗粒的尺寸,但增加了颗粒的密度。SBH值与颗粒分布具有很强的相关性。最均匀分布的最小的颗粒得到最高的SBH值的Pt/n-InP接触。使用具有导电尖端的AFM系统的I-V测量显示,在InP和GaAs上的单个Pt颗粒中实现了如此高的SBH。4)上述结果可以解释如下:在优化的条件下,低能量电化学过程形成精细的金属纳米颗粒,而不会在半导体表面上引起大程度的无序。该界面没有氧化物夹层、界面应力和工艺引起的缺陷。这导致费米能级钉扎的去除和强烈的金属功函数依赖的SBH值。5)原位电化学过程成功地应用于亚微米T形的形成
英文摘要
The purpose of this study is to realize the "Schottky limit" for various metal-compound semiconductor (M-S) interfaces by removing Fermi-level pinning using an in-situ electrochemical process and to apply this process to various devices. The main results obtained are listed below :1) A novel in-situ electrochemical process enables us to produce Schottky contacts with strongly metal-workfunction dependent Schottky barrier heights (SBHs) for InP, GaAs and GaN.Particularly, SBHs higher than 0.86 and 0.92eV were achieved for Pt/n-InP and Pt/n-GaAs contacts, respectively. These values are close to those in the Schottky limit.2) The M-S interfaces prepared by the in-situ electrochemical process were found to possess no oxide interlayers, no interface stress as well as no process-induced defect levels.3) Detailed AFM measurements revealed that the electrochemical deposition was initiated by formation of nm-sized metal particles. Further deposition did not increase the particle size but increased density of particle. The SBH values exhibited a strong correlation with the particle distribution. The most uniform distribution of the smallest particles gave highest SBH values for Pt/n-InP contact. An I-V measurements using AFM system with conductive tip revealed that such high SBHs were realized in single Pt particles on InP and GaAs.4) The above results can be explained as follows : Under optimized conditions, the low-energy electrochemical process forms fine metal nano particles without causing a large degree of disorder on the semiconductor surface. The interface is free from oxide interlayers, interface stress and process-induced defects. This leads to removal of the Fermi-level pinning and to strongly metal-workfunction dependent SBH values.5) The in-situ electrochemical process was successfully applied to formation of sub-micron T-shaped
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M.Kihara: "Effect of Mis-Orientation of Mesa-Stripes on the Growth of InGaAs Quantum Wires by Selective Molecular Beam Epitaxy" Applied Surface Science. 117/118. 695-699 (1997)
M.Kihara:“台面条纹的错误取向对选择性分子束外延生长 InGaAs 量子线的影响”应用表面科学。
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K.Iizuka: "Small-Signal Response of Interface States at Passive InGaAs Surfaces from Low Frequencies up to Microwave Frequencies" Solid-Sttate Electronics. 41. 1463-1468 (1997)
K.Iizuka:“从低频到微波频率的无源 InGaAs 表面界面态的小信号响应”固态电子学。
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H.Hasegawa: "Evolution Mechanism of Nearly Pinning-Free Platinum/n-type Indium Phosphide Interface with a High Schottky Barrier Height by in situ Electrochemical Process" Journal of Vacuum Science and Technology. B15. 1227-1235 (1997)
H.Hasekawa:“通过原位电化学过程实现具有高肖特基势垒高度的近无钉扎铂/n型磷化铟界面的演化机制”真空科学与技术杂志。
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M. B.Takeyama: "Interfacial Reaction and Electrical Properties in the Sputter-Deposited Al/Ti Ohmic Contact to n-InP" Japanese Journal of Applied Physics. 38in press. (1999)
M. B.Takeyama:“溅射沉积 Al/Ti 与 n-InP 欧姆接触中的界面反应和电性能”日本应用物理学杂志。
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H.Fujikura: "Formation of Highly Uniform InGaAs Ridge Quantum Wires by Selective Molecular Beam Epitaxy on Novel InP Patterned Substrates" Thin Solid Films. 336. 22-25 (1998)
H.Fujikura:“通过选择性分子束外延在新型 InP 图案化衬底上形成高度均匀的 InGaAs 脊量子线”固体薄膜。
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共 136 条
Research for Immunotherapy of Adult T cell Leukemia(ATL)
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批准号:21590521
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$2.91万
-
财政年份:2009
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负责人:HASEGAWA Hideki
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依托单位:
International Organization of Francophonie and multicultural and cultural society
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批准号:20530456
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$2.0万
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财政年份:2008
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负责人:HASEGAWA Hideki
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依托单位:
GaN-based Chemical Sensors and Their On-chip Integration Using Nanowire Networks
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批准号:18360002
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$10.99万
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财政年份:2006
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负责人:HASEGAWA Hideki
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依托单位:
Single Electron Integrated Circuits Based on A BDD Architecture Utilizing Quantum Dots Controlled by Nano-Schottky Gates
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批准号:13305020
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项目类别:Grant-in-Aid for Scientific Research (A)
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资助金额:$35.44万
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财政年份:2001
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负责人:HASEGAWA Hideki
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依托单位:
Research and development of III-V quantum wire transistor-based logic and memory circuits operating near the quantum limit
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批准号:12555083
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$8.58万
-
财政年份:2000
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负责人:HASEGAWA Hideki
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依托单位:
Control of Metal-Compound Semiconductor Interfaces by Formation of Nano-Scale Schottky Contacts and Its Application
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批准号:11450115
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项目类别:Grant-in-Aid for Scientific Research (B).
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资助金额:$9.66万
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财政年份:1999
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负责人:HASEGAWA Hideki
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依托单位:
Novel Insulated Gate Structure having Ultrathin Si Quantum Well for Realization of InP-Based Ultra High-Frequency and High-Power Devices
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批准号:10555098
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$8.26万
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财政年份:1998
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负责人:HASEGAWA Hideki
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依托单位:
"Control of surface and interfaces of nano-structures for single electron devices"
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批准号:08247101
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项目类别:Grant-in-Aid for Scientific Research on Priority Areas
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资助金额:$143.3万
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财政年份:1996
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负责人:HASEGAWA Hideki
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依托单位:
Developement of Contactless and Non-Destructive Capacitance-Voltage Measurement System in Ultra-High Vacuum
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批准号:08555072
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项目类别:Grant-in-Aid for Scientific Research (A)
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资助金额:$3.84万
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财政年份:1996
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负责人:HASEGAWA Hideki
-
依托单位:
Control of surface states for III-V semiconductor quantum structures and its application to novel optical devices
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批准号:07455017
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$4.74万
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财政年份:1995
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负责人:HASEGAWA Hideki
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依托单位:
Characterization and Control of Interaction between Quantized Energy Levels and Surface/Interface States in Compound Semiconductor Quantum Structures.
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批准号:05452181
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项目类别:Grant-in-Aid for General Scientific Research (B)
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资助金额:$4.54万
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财政年份:1993
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负责人:HASEGAWA Hideki
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依托单位:
A Novel Contactless and Nondestructive Measurement Method of Surface State Density on Semiconductor Free Surface, and Control of Their Surfaces
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批准号:03452147
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项目类别:Grant-in-Aid for General Scientific Research (B)
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资助金额:$4.48万
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财政年份:1991
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负责人:HASEGAWA Hideki
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依托单位:
A new MIS Interface Control Technology for Fabrication of High Spatial Resolution InGaAs Change Coupled Devices for Imaging
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批准号:03555056
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项目类别:Grant-in-Aid for Developmental Scientific Research (B)
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资助金额:$8.7万
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财政年份:1991
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负责人:HASEGAWA Hideki
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依托单位:
New Waveguides for Microwave Monolithic Integrated Circuits Using Distributed Parameter Effects of Semiconductor Carriers
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批准号:63460115
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项目类别:Grant-in-Aid for General Scientific Research (B)
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资助金额:$4.22万
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财政年份:1988
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负责人:HASEGAWA Hideki
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依托单位: