"Realization of Schottky-limit at metal-semiconductor interfaces and its application to electron devices"

“金属-半导体界面肖特基极限的实现及其在电子器件中的应用”

• 批准号: 09450118
• 负责人: HASEGAWA Hideki
• 金额: $ 9.09万
• 依托单位: HOKKAIDO UNIVERSITY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 1997
• 资助国家: 日本
• 起止时间: 1997 至 1998
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-09450118/
• 关键词: electrochemical process; Schottky limit; metal-semiconductor interface; Fermi-level pinning; nano metal particle; Schottky barrier height; ショットキー障壁高; インジウムリン; パルス法

The purpose of this study is to realize the "Schottky limit" for various metal-compound semiconductor (M-S) interfaces by removing Fermi-level pinning using an in-situ electrochemical process and to apply this process to various devices. The main results obtained are listed below :1) A novel in-situ electrochemical process enables us to produce Schottky contacts with strongly metal-workfunction dependent Schottky barrier heights (SBHs) for InP, GaAs and GaN.Particularly, SBHs higher than 0.86 and 0.92eV were achieved for Pt/n-InP and Pt/n-GaAs contacts, respectively. These values are close to those in the Schottky limit.2) The M-S interfaces prepared by the in-situ electrochemical process were found to possess no oxide interlayers, no interface stress as well as no process-induced defect levels.3) Detailed AFM measurements revealed that the electrochemical deposition was initiated by formation of nm-sized metal particles. Further deposition did not increase the particle size but increased density of particle. The SBH values exhibited a strong correlation with the particle distribution. The most uniform distribution of the smallest particles gave highest SBH values for Pt/n-InP contact. An I-V measurements using AFM system with conductive tip revealed that such high SBHs were realized in single Pt particles on InP and GaAs.4) The above results can be explained as follows : Under optimized conditions, the low-energy electrochemical process forms fine metal nano particles without causing a large degree of disorder on the semiconductor surface. The interface is free from oxide interlayers, interface stress and process-induced defects. This leads to removal of the Fermi-level pinning and to strongly metal-workfunction dependent SBH values.5) The in-situ electrochemical process was successfully applied to formation of sub-micron T-shaped

本研究的目的是通过原位电化学工艺去除费米能级钉钉来实现各种金属-化合物半导体（M-S）界面的“肖特基极限”，并将该工艺应用于各种器件。获得的主要结果如下：1)一种新的原位电化学工艺使我们能够为InP， GaAs和GaN产生具有强烈金属工函数依赖的肖特基势垒高度（SBHs）的肖特基接触。特别是，Pt/n-InP和Pt/n-GaAs触点的SBHs分别高于0.86和0.92eV。这些值接近肖特基极限的值。2)原位电化学法制备的M-S界面无氧化夹层，无界面应力，无工艺缺陷。3)详细的AFM测量表明，电化学沉积是由纳米级金属颗粒的形成引起的。进一步沉积没有增加颗粒的大小，但增加了颗粒的密度。SBH值与颗粒分布有较强的相关性。最小颗粒分布最均匀，使得Pt/n-InP接触的SBH值最高。利用带有导电尖端的AFM系统进行的I-V测量表明，在InP和GaAs上的单个Pt颗粒中实现了如此高的SBHs。4)上述结果可以解释为：在优化条件下，低能电化学过程形成了精细的金属纳米颗粒，而不会在半导体表面造成很大程度的无序。该界面没有氧化层、界面应力和工艺缺陷。这导致了费米水平钉钉的去除和强烈依赖于金属工作函数的SBH值。5)原位电化学工艺成功应用于亚微米t形材料的形成

项目成果

Y.Satoh, S.Kasai, K.Jinushi and H.Hasegawa: "Computer Simulation and Experimental Characterization of Single Electron Transistors Based on Schottky Wrap Gate Control of 2DEG" Jpn.J.Appl.Phys.vol.37, No.3B. 1584-1590 (1998)

Y.Satoh、S.Kasai、K.Jinushi 和 H.Hasekawa：“基于 2DEG 肖特基环绕栅极控制的单电子晶体管的计算机模拟和实验表征”Jpn.J.Appl.Phys.vol.37，No.3B

Hideki Hasegawa, Taketomo Sato, Hiroshi Okada, Kei-ichiro Jinushi, Seiya Kasai and Yoshihiro Satoh: "Electrochemical Formation and Characterization of Schottky In-Plane and Wrap Gate Structures for Realization of GaAs- and InP-based Quantum Wires and Dots

Hideki Hasekawa、Taketomo Sato、Hiroshi Okada、Kei-ichiro Jinushi、Seiya Kasai 和 Yoshihiro Satoh：“肖特基面内和包裹栅极结构的电化学形成和表征，用于实现基于 GaAs 和 InP 的量子线和点

B.Adamowicz and H.Hasegawa: "Computer Analysis of Surface Recombination Process at Si and Compound Semiconductor Surfaces and Behavior of Surface Recombination Velocity" Jpn.J.Appl.Phys.37. 1631-1637 (1998)

B.Adamowicz 和 H.Hasekawa：“硅和化合物半导体表面表面复合过程的计算机分析以及表面复合速度的行为”Jpn.J.Appl.Phys.37。

Y.Ishikawa, N.Tsurumi, T.Fukui and H.Hasegawa: "Scanning tunneling microscopy and x-ray photoelectron spectroscopy studies of atomic level structure and Fermi level pinning on GaAs (110) surfaces grown by molecular beam epitaxy" J.Vac.Sci.Technol.16. 2387

Y.Ishikawa、N.Tsurumi、T.Fukui 和 H.Hasekawa：“扫描隧道显微镜和 X 射线光电子能谱研究分子束外延生长的 GaAs (110) 表面上的原子级结构和费米能级钉扎” J.Vac

T.Muranaka, H.Okada, H.Fujikura and H.Hasegawa: "Size-Controlled Formation of Decananometer InGaAs Quantum Wires by Selective Molecular Beam Epitaxy on InP Patterned Substrates" to be published in Jpn.J.Appl.Phys.38. (1999)

T.Muranaka、H.Okada、H.Fujikura 和 H.Hasekawa：“通过 InP 图案化衬底上的选择性分子束外延实现十纳米 InGaAs 量子线的尺寸控制形成”，即将发表在 Jpn.J.Appl.Phys.38 上。