Electrically pumped III/V nanowire light emitters

光通信的波长范围内的光发射应完全使用电刺激。我们建议用插入的合金半导体作为光学活性材料来生长轴向和核壳纳米线pn结。光的发射将由先进的异质结构纳米线设计和技术控制。光学有源区的组成应控制光发射的波长。应通过表面钝化(E3)、介质涂层(P1)和光学掺杂(P4)来设计强度和模谱。除了对波长的控制外，本工作还将重点阐述同轴pn异质结构纳米线中的电刺激激光。这种方法的成功将通过激发态寿命测量来评估(P2)。场辅助自组装应适用于光电子器件，以加快其在全工艺电路(如硅-CMOS)中的共集成。

Exclusively electrical stimulation shall be used for the emission of light in the wavelength regime of optical communications. We propose to grow axial and core-shell nanowire pn-junctions with inserted alloy semiconductor as the optically active material. The emission of light shall be controlled by advanced hetero structure nanowire design and technology. The composition of the optical active regime shall control the wavelength of light emission. The intensity and the mode spectrum shall be engineered by surface passivation (E3), dielectric coating (P1), and optical doping (P4). In addition to the control of the wavelength the work will focus on the elaboration of electrically stimulated lasing in coaxial pn hetero structure nanowires. The success of this approach will be evaluated by exited-state lifetime measurements (P2). Field-assisted self-assembly shall be adapted to optoelectronic devices in order to speed up their co-integration in fully processed circuits such as Si-CMOS.