High-Mobility Perovskite Thin Films

该项目由材料研究部电子与光子材料（EPM）和陶瓷（CER）项目共同资助。非技术描述：该项目侧重于开发一种新型薄膜氧化物半导体，这种半导体在能源材料和新型电子设备的应用中具有很大的兴趣。该项目通过基础材料研究和先进薄膜沉积方法的开发来解决技术挑战。该项目合成的高度完美的薄膜影响了氧化物材料的理论认识。该项目的研究活动通过正式（课程和每周研讨会）和非正式（实验室）的培训，为研究生和本科生提供先进薄膜沉积方法和材料表征的跨学科培训。技术细节：该项目专注于开发分子束外延方法，用于生长一类新的薄膜氧化物半导体，钙钛矿锡酸盐，其目标是实现材料的高度完美，并确定这些材料的内在特性。SrSnO3和BaSnO3等材料结合了高载流子迁移率和宽带隙，这使得它们在透明导电氧化物、功率半导体或与功能钙钛矿集成的新型异质结构等应用中非常有趣。将建立化学计量薄膜生长的条件，结构-性能关系，以及材料缺陷的作用。该项目为本科生提供了为期两到三个月的独立实习机会，并与材料理论家和电子设备专家进行跨学科合作。

This project is jointly funded by the Electronic and Photonic Materials (EPM) and Ceramic (CER) Programs in the Division of Materials Research. NON-TECHNICAL DESCRIPTION:The project focuses on the development of a new class of thin film oxide semiconductors that are of great interest for applications as energy materials and for novel electronic devices. The project addresses technical challenges through basic materials studies and the development of advanced thin film deposition methods. The highly perfect films synthesized in this project impact the theoretical understanding of oxide materials. The research activities in the project contribute to the interdisciplinary training of graduate and undergraduate students in advanced thin film deposition methods and materials characterization through training in both formal (courses and weekly seminars) and informal (laboratory) settings. TECHNICAL DETAILS: The project focuses on the development of molecular beam epitaxy methods for the growth of a new class of thin film oxide semiconductors, the perovskite stannates, with the goal of achieving a high degree of materials perfection and to determine the intrinsic properties of these materials. Materials such as SrSnO3 and BaSnO3 combine high charge carrier mobilities with wide band gaps, which makes them highly interesting for applications such as transparent conducting oxides, power semiconductors, or in novel heterostructures for the integration with functional perovskites. Conditions for stoichiometric thin film growth, structure-property relationships, and the role of materials defects will be established. The project provides opportunities for two- to three-month-long, self-contained internships for undergraduate students and for interdisciplinary collaborations with materials theorists and experts in electronic devices.