EAGER: Electrical Properties of 2D Phosphorene

奖摘要标题：2D磷烯的电学性质PI：Peide Ye，普渡大学非技术类：PI为一种由黑磷衍生的新型2D单层材料创造了一个名称Phferorene。与石墨烯不同，磷烯具有固有的、直接的和可察觉的带隙，并且与MoS2或其他过渡金属二卤化物不同，它的载流子迁移率可以达到10,000 cm2/vs的数量级。因此，在超大规模薄体晶体管应用中，磷烯有可能克服所有其他2D材料的挑战，从而改变电子行业。他的团队是世界上第一个成功地从黑磷中剥离单层磷烯，并展示了几层磷烯良好的晶体管性能的团队。自从PIS最初的工作以来，人们对探索磷烯的性质和应用产生了极大的兴趣。在这个迫切的项目中，PI将专注于通过剥离来探索磷烯，并调查研究的电学性质和设备集成方面。技术：作为唯一可以像石墨烯一样剥离的其他元素材料，具有固有的、直接的和可察觉的带隙和高载流子迁移率，磷烯作为下一代器件的基础材料是一个独特的机会。PI通过剥离进行的初步探索将指导开发高质量、无缺陷的材料和工艺，使其能够安全轻松地集成到设备架构中。此外，磷烯高度褶皱的结构决定了每一层都由两个紧密结合的原子层组成，这一特性可以被利用来开发未来大规模的气相沉积制造工艺。这种褶皱结构还使磷烯具有高度的各向异性，这是一种可用于电热应用的特性。为了降低磷烯对环境的敏感性，并探索其他新的结构和性质，将探索磷烯与石墨烯、h-BN、MoS_2或其他硫化物和氧化物之间的异质结。例如，与大多数其他2D材料不同，磷烯本质上是p型的，p型磷化三极管可以与n型MoS2晶体管相结合，形成能效的CMOS电路和2D隧穿场效应管。PI不仅将促进参与拟议项目的人力资源的多样性，而且还将扩大定义和解决与亚磷烯有关的重要研究问题的思想、想法和方法的多样性。PI致力于将研究和教育结合起来，并制定了详细的计划，以增强工程方面的多样性。PI计划将2D材料和设备的研究与课程开发相结合，以扩大研究的影响。

Award Abstract Title: Electrical Properties of 2D PhosphorenePI: Peide Ye, Purdue University Non-technical: The PI has coined the name Phosphorene for a new 2D single-layer material derived from black phosphorus. Phosphorene, unlike graphene, has an inherent, direct and appreciable bandgap and, unlike MoS2 or other transition-metal dichalcogenides, can have carrier mobility on the order of 10,000 cm2/Vs. Thus, phosphorene can potentially overcome the challenges of all other 2D materials for ultra-scaled thin-body transistor applications thereby transforming the electronics industry. His group is the first in the world to successfully exfoliate single-layer phosphorene from black phosphorus and to demonstrate promising transistor performance on few-layer phosphorene. Since the PIs initial work, there is a great deal of interest that has been generated on exploring the properties and applications of phosphorene. In this EAGER project, the PI will focus on the exploration of phosphorene by exfoliation and investigate the electrical properties and device integration aspects of the research. Technical: Being the only other elemental material that can be exfoliated like graphene and with an inherent, direct and appreciable bandgap and high carrier mobility, phosphorene represents a unique opportunity as the basic material for next generation devices. The PI's initial exploration through exfoliation will guide the development for high-quality, defect-free materials and processes that enable safe and easy integration into device architectures. Additionally, the highly puckered structure of phosphorene dictates that each single layer comprises two tightly bonded atomic layers a property that can be exploited to develop a large-scale vapor-phase-deposition manufacturing process in future. The puckered structure also makes phosphorene highly anisotropic a property that can be exploited for electrothermal applications. To reduce the environmental sensitivity of phosphorene and to explore other novel architectures and properties, heterojunctions between phosphorene and graphene, h-BN, MoS2, or other chalcogenides and oxides will be explored. For example, unlike most other 2D materials, phosphorene is naturally p-type, and p-type phosphorene transistors can be combined with n-type MoS2 transistors to form energy-efficient CMOS circuits and 2D tunneling field-effect transistors. The PI will not only promote diversity in the human resources engaged in the proposed project, but will also expand on the diversity of thought, ideas, and approaches in defining and solving important research questions concerning phosphorene. The PI is committed to integrating research and education, and has detailed plans to enhance diversity in engineering. The PI plans to integrate research with curriculum development on 2D materials and devices to broaden the impact of the research.