OP: Towards high performance nanowire photonic devices: Novel testing techniques and device structures

摘要标题：迈向高性能纳米线光子器件：新型测试技术和器件结构摘要非技术性：该基金将专注于半导体纳米线的研究和开发，这种材料的直径只有几十纳米，但长度为微米。半导体纳米线创造了在所有三个维度上结构化材料的可能性，其中纳米线内具有更大范围的元素和化合物，并且通过纳米线的有序阵列和图案。结构化半导体材料的重要性，光子器件（与光工作的设备）的历史说明。例如，半导体异质结构已经使固态照明成为可能，高效发光二极管正在取代白炽灯和荧光灯（2014年诺贝尔物理学奖）。为了使半导体纳米线具有竞争力，需要克服许多挑战。其一是半导体纳米线的质量目前远低于传统的平面材料（分层排列的半导体）。在这项研究中，我们将使用一种新的光学技术来解决纳米线的不同部分，例如侧面，末端，内部的质量。第二，我们将寻求开发在中红外波长发射的半导体纳米线，其具有新颖的半导体材料组合，例如在纳米线内分层并进一步减小纳米线直径。第三，我们将寻求修改和控制的半导体纳米线器件的发光特性，通过图案化和纳米线阵列的定位，拟议的研究的基本原理是，它将建立一个强大的科学框架，确定所需的关键机制，开发高性能的中红外III-V纳米线光子器件。此外，该项目的目标是协同与我们更广泛的影响目标，产生更多的公众意识，兴奋，并了解如何物理，工程和计算机建模可以用来开发技术，我们在日常生活中使用。摘要技术：一个多方面的计划，提出了调查中红外发射器和超材料光学元件从自下而上，III-V纳米线和纳米线异质结构。 由于通过横向膨胀来适应应变的能力，新的材料组合在纳米线中成为可能。与平面材料相比，可以在砷化铟（InAs）/砷化锑化铟（InAsSb）超晶格纳米线中设想新的合金组合物和衬底材料，平面材料是一种有前途的中红外材料，这是由于非常小的非辐射肖克利-里德-霍尔复合系数，但不幸的是高的非辐射俄歇复合系数。 新的材料组合和纳米线的横向量子限制提供了新的可能性，抑制俄歇与能带结构工程。 纳米线中载流子的辐射复合将通过纳米线尺寸、图案和周期性的变化来修改和控制。 中红外III-V纳米线将使用选择性区域外延生长，该技术可以精确控制纳米线的图案和尺寸。 一种新的光学测量技术将被用来空间解决复合系数（肖克利-读取-霍尔，俄歇，辐射）内的纳米线。将测量从发光二极管到放大自发辐射到激光的纳米线发射。纳米线也将作为被动中红外光学元件进行研究，以改善发光二极管的光提取和准直。纳米线滤波器和2D光子晶体将被建模，生长和测量。

Abstract title: Towards high performance nanowire photonic devices: Novel testing techniques and device structuresAbstract Non-technical: This grant will focus on research and development of semiconductor nanowires, materials with diameters just a few tens of nanometers but lengths of microns. Semiconductor nanowires create the possibility of structuring materials in all three dimensions, with a greater range of elements and compounds within the nanowire, and through ordered arrays and patterns of nanowires. The importance of structuring semiconductor materials for photonic devices (devices that work with light) is illustrated historically. For example, semiconductor heterostructures have made possible solid state lighting, high efficiency light emitting diodes that are replacing incandescent and fluorescent lighting (2014 Nobel Prize in Physics). For semiconductor nanowires to become competitive, a number of challenges need to be overcome. One is that the quality of semiconductor nanowires are currently far below that of conventional planar materials (semiconductors arranged in layers). In this grant, we will use a novel optical technique to resolve the nanowire quality in different parts of the wire, e.g. sides, ends, interior. Second, we will seek to develop semiconductor nanowires that emit at mid-infrared wavelengths with novel semiconductor materials combinations, such as layering within the nanowires and further reducing the nanowire diameter. Third, we will seek to modify and control the light emission characteristics of the semiconductor nanowire devices through patterning and positioning of nanowires in arrays.The rationale for the proposed study is that it will establish a strong scientific framework by identifying the key mechanisms needed to develop high performance mid-infrared III-V nanowire photonic devices. Furthermore, the project goals are synergistic with our broader impacts goal of generating more public awareness, excitement, and understanding in how physics, engineering, and computer modeling can be used to develop technologies that we use in our daily lives.Abstract Technical: A multi-faceted program is proposed to investigate mid-infrared emitters and metamaterial optical components from bottom-up, III-V nanowires and nanowire heterostructures. Due to a capacity to accommodate strain through lateral expansion, new material combinations become possible in nanowires. New alloy compositions and substrate materials can be contemplated in indium arsenide (InAs)/indium arsenide antimonide (InAsSb) superlattice nanowires compared to planar materials, a promising mid-infrared material due to remarkably a small non-radiative Shockley-Read-Hall recombination coefficient but unfortunately high non-radiative Auger recombination coefficient. New material combinations and lateral quantum confinement in nanowires give new possibilities to suppress Auger with bandstructure engineering. Radiative recombination of carriers in nanowires will be modified and controlled by variation of nanowire size, pattern, and periodicity. Mid-infrared III-V nanowires will be grown using selective area epitaxy, a technique giving precise control over nanowire pattern and size. A novel optical measurement technique will be used to spatially resolve recombination coefficients (Shockley-Read-Hall, Auger, radiative) inside nanowires. Nanowire emission from light emitting diodes to amplified spontaneous emission to lasing will be measured. Nanowires will also be investigated as passive mid-infrared optical components to improve light extraction and collimation from light emitting diodes. Nanowire filters and 2D photonic crystals will be modeled, grown, and measured.