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Sensing and Imaging with Motion in Structured Optical Illumination

Sensing and Imaging with Motion in Structured Optical Illumination
结构化光学照明中的运动传感和成像
批准号:
1610068
负责人:
Kevin Webb
金额:
$34.0万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2016
资助国家:
美国
项目状态:
已结题
起止时间:
2016-07-01 至 2019-12-31

项目摘要

项目成果

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中文摘要
翻译
标题:结构光学照明中的运动传感和成像摘要非技术:通过光学测量可以获得关于对象的增强信息,作为对象位置的函数,可以自然运动或控制位置调整。正在具有两个面的成像和检测方法中利用该概念。在一种情况下,作为物体位置的函数测量的散射光的散斑图案被用来重建被遮挡的运动物体。最初的实验使用了在散射的丙烯酸薄片之间扫描的介电物体,允许控制所有相关的变量,这将使应用程序包括在活的受试者中进行光学成像,例如大脑深处的细胞和造影剂,以及在给定环境杂乱的情况下进行成像。在这些应用中,光学成像提供的安全性、便利性、分辨率和信息至关重要。特别重要的是,该方法对于非常强的散射将是有效的,使得通过大量组织进行成像成为可能。在更广泛的层面上,这项努力涉及到在利用自然运动和空间多样性的分散环境中进行交流的新机会。这项工作的另一个方面涉及使用光学测量作为半导体晶片在空间变化的光学强度中的精确位置的函数,以在制造的早期阶段发现缺陷。这解决了工业中的一个主要需求,因为没有令人满意的方法来发现三维设备中的缺陷,这些设备已经成为消费电子产品中的重要组成部分。这种方法正在使用具有引入缺陷的示例材料安排进行评估。了解该项目的这一方面也将有助于与结构和材料表征相关的其他应用。技术:激光光学散斑图案作为物体位置的函数被用来形成位置上的强度相关性。该数据已经被显示为提供对关于移动对象的信息的访问,并通过重建方法提供对隐藏对象的图像的访问。例如,已经获得了隐藏孔径的图像。正在寻求的关键方面是可以获得物体的介电常数作为位置的函数的证据,从而建立在强散射介质中成像的一般原理。实验使用具有受控性质的散射介质和平移工作台。有关可能的解决方案的信息也在调查中。该项目的另一个方面涉及使用代表有缺陷的半导体晶片的模型材料布置,由此使用压电台在光学驻波场中扫描样品,该光学驻波场是由激光照射和来自镜子的反射产生的。作为样品位置的函数的检测光与模型相结合,允许确定缺陷的存在。这种方法的有效性正在评估中,以应用于半导体晶片检测行业。由于现有的光学检测方法不能充分检测三维半导体结构中的微小缺陷,这种方法将提供解决方案的前景可能满足数十亿美元的检测市场需求。
英文摘要
Title: Sensing and Imaging with Motion in Structured Optical Illumination AbstractNon-technical: Enhanced information about an object is available with optical measurements as a function of object position, with either natural motion or controlled adjustment of position. This concept is being exploited in an imaging and detection method having two facets. In one, speckled patterns of scattered laser light measured as a function of object position are being used to reconstruct the obscured moving object. The initial experiments use scanned dielectric objects between scattering acrylic sheets, allowing control over all relevant variables, which will enable applications including optical imaging in living subjects, such as cells and contrast agents deep within the brain, and imaging given environmental clutter. The safety, convenience, resolution, and information available from optical imaging in these applications are paramount. Of particular significance, the method will be effective for very heavy scatter, making it possible to image through substantial amounts of tissue. At a more general level, the effort relates to new opportunities for communication in a scattering environment that exploit natural motion and spatial diversity. The other aspect of the work involves use of optical measurements as a function of the precise position of a semiconductor wafer in a spatially varying optical intensity to find defects at an early stage of manufacture. This addresses a major need in industry, because there is no satisfactory method to find defects in three-dimensional devices that have become important in consumer electronics. This approach is being evaluated using example material arrangements with an introduced defect. Understanding from this aspect of the project will also be useful in other applications related to structure and material characterization. Technical: Laser optical speckle patterns as a function of object position are being used to form intensity correlations over position. This data has been shown to provide access to information about the moving object, and through a reconstruction method, to an image of the hidden object. For example, the image of a hidden aperture has been obtained. The key aspect being sought is evidence that the object's dielectric constant as a function of position can be obtained, thereby establishing the general principle of imaging in heavily scattering media. Experiments use scattering media with controlled properties and a translation stage. Information on the possible resolution is also being investigated. The other aspect of this project involves use of a model material arrangement representative of a semiconductor wafer with a defect, whereby the sample is scanned using a piezoelectric stage in an optical standing wave field created by illumination with a laser and reflection from a mirror. Detected light as a function of sample position, coupled with a model, allows the presence of a defect to be determined. The efficacy of this approach is being evaluated for application in the semiconductor wafer inspection industry. Because existing optical inspection methods are incapable of adequately detecting small defects in three-dimensional semiconductor structures, the prospect that this approach will provide a solution could address a multi-billion-dollar inspection market need.
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