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DCL:HBCU:EAGER: Development of Wafer-Scale Fabrication of Carbon-Based Integrated Electronic Devices

DCL:HBCU:EAGER: Development of Wafer-Scale Fabrication of Carbon-Based Integrated Electronic Devices
DCL:HBCU:EAGER:碳基集成电子器件晶圆级制造的发展
批准号:
1740687
负责人:
Zhigang Xiao
金额:
$30.0万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2017
资助国家:
美国
项目状态:
已结题
起止时间:
2017-08-01 至 2021-07-31

项目摘要

项目成果

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中文摘要
翻译
DCL:HBCU:EIGER:碳基集成电子器件圆片级制造的发展肖碳纳米管、志刚碳纳米管和石墨烯是很有前途的电子纳米材料,由于它们优越的电学性能,可以用于未来的电子应用。在这个项目中,使用碳纳米管的设备将具有增强的电学性能。这项创新研究将简化和改进这些设备的现有制造流程。这将使改进的集成电路和电子设备的发展成为可能。半导体设备代表着一个价值数万亿美元的行业。通过该项目开发的新设备可以为快速增长的半导体和纳米制造行业做出贡献。因此,如果成功,这个项目可能会对美国和全球社会产生巨大影响,并提供许多社会效益。这项建议的主要教育目标是整合研究目标,以提升学生的教育体验。研究生和本科生将在该项目中指导进行纳米制造方面的研究。拟议中的项目还将为高中生提供暑期研究机会。这将大大增加少数族裔学生进行研究和接受纳米技术培训的机会。这项研究的目标是开发晶片规模的碳基集成电子设备制造。实现碳纳米管器件的一个主要问题是难以以可控的方式定位和组装碳纳米管。在这个早期的探索性研究拨款项目中,使用了一种基于电场定向介电泳法的非传统方法来沉积和排列超高密度碳纳米管。功能器件的成品率低是另一个主要问题,因为目前还没有有效的方法将金属碳纳米管从半导体管中分离出来,而金属管不可避免地存在于制造的晶体管中,导致电学性能较差。在本项目中,为了解决成品率低的问题,提出了用半导体材料代替金属作为源漏接触。该项目的另一项主要研究工作是使用电场和纳米级电极一起使用电子束/热蒸发来生长纳米结构的碳薄膜和石墨烯。所提出的方法可以实现石墨烯器件的晶片规模制造。智力优势:这个项目具有潜在的变革性,可以创造一种新的晶片规模的碳基设备制造范例。它将为碳集成器件的制造提供新的方法,从而极大地造福于研究界和半导体行业。创新的介电泳法可以有效地对准和沉积超密碳纳米管,而半导体接触可以极大地改善所制造器件的电学性能,显著提高功能器件的成品率。电场定向的纳米结构碳薄膜和石墨烯的创新生长虽然未经测试,但仍是新颖和未被探索的,并可能导致石墨烯器件的大规模制造。这一迫切的项目可能导致实现晶片规模的碳纳米管和石墨烯集成器件的应用,以应用于未来的纳米电子学。
英文摘要
DCL:HBCU:EAGER: Development of Wafer-Scale Fabrication of Carbon-Based Integrated Electronic DevicesXiao, ZhigangCarbon nanotubes and graphene are promising electronic nanomaterials and could be used for the application of future electronics because of their superior electrical property. In this project, devices using carbon nanotubes will be made with enhanced electrical properties. The innovative research will result in streamlining and enhancing current manufacturing processes for these devices. This will enable the development of improved integrated circuits and devices for electronics. Semiconductor devices represent a multi-trillion dollar industry. The novel devices developed through this project could contribute to the rapidly growing industries of semiconductor and nano-manufacturing. Thus, if successful, this project could have great impacts on US and global societies, and provide many societal benefits. The primary educational goal of this proposal is to integrate the research objectives to enhance the educational experiences of students. Graduate and undergraduate students will be mentored to perform research in nanofabrication in the project. The proposed project will also offer summer research opportunities for high school students. It will significantly increase opportunities for minority students to perform research and to be trained in nanotechnologyThe objective of this research is to develop wafer-scale fabrication of carbon-based integrated electronic devices. A major problem in the realization of carbon nanotube devices is the difficulty to position and assemble carbon nanotubes in a controlled way. In this Early Grant for Exploratory Research (EAGER) project, an unconventional approach, based on the electric field directed dielectrophoresis method is used to deposit and align ultra-dense carbon nanotubes. The poor yield of functional devices is another major problem, because currently there is no effective way to separate the metallic carbon nanotubes from the semiconducting tubes, and the metallic tubes unavoidably exist in fabricated transistors, resulting in poor electrical properties. In this project, semiconductor materials are proposed to replace metals as the source/drain contacts for solving the problem of poor yield. Another major research effort in this project is to use electrical fields together with nanoscale electrodes to grow nanostructured carbon thin films and graphene using the e-beam/thermal evaporation. The proposed approach could achieve the wafer-scale fabrication of graphene devices. Intellectual Merit: This project is potentially transformative, and could create a new wafer-scale carbon-based device fabrication paradigm. It will greatly benefit the research community and semiconductor industry by providing new approaches for the fabrication of carbon integrated devices. The innovative dielectrophoresis method could effectively align and deposit ultra-dense carbon nanotubes while the semiconductor contact could greatly improve the electrical properties of fabricated devices, significantly increasing the yield of functional devices. The electrical field-directed innovative growth of nanostructured carbon thin films and graphene, while untested, is novel and unexplored, and could lead to wafter-scale fabrication of graphene devices. This EAGER project could lead to the realization of wafer-scale fabrication of carbon nanotube and graphene integrated devices for the application of future nanoelectronics.
期刊论文(4)
专著(0)
科研奖励(0)
会议论文
DOI: 10.3390/c7040067
发表时间: 2021-09
期刊: C
影响因子: --
作者: [Zhigang Xiao;K. Kisslinger;Rebhadevi Monikandan]
通讯作者: Zhigang Xiao;K. Kisslinger;Rebhadevi Monikandan
DOI: 10.1088/1361-6528/abb04a
发表时间: 2020-11-27
期刊: NANOTECHNOLOGY
影响因子: 3.5
作者: [Xiao, Zhigang, Williams, Lauren, Camino, Fernando]
通讯作者: Camino, Fernando
DOI: 10.3390/cryst10020136
发表时间: 2020-02
期刊: Crystals
影响因子: 2.7
作者: [Zhigang Xiao;K. Kisslinger;S. Chance;S. Banks]
通讯作者: Zhigang Xiao;K. Kisslinger;S. Chance;S. Banks
Excellence in Research: Development of two-dimensional (2D) molybdenum disulfide (MoS2) and molybdenum selenium (MoSe2) thin-film nanomaterials and nanoelectronic devices
  • 批准号:
    2100748
  • 项目类别:
    Standard Grant
  • 资助金额:
    $49.12万
  • 财政年份:
    2021
  • 负责人:
    Zhigang Xiao
  • 依托单位:
Collaborative Research: RUI: Natural Bio-organic Resistive Random Access Memory Based Synaptic Devices
  • 批准号:
    2105388
  • 项目类别:
    Standard Grant
  • 资助金额:
    $10.0万
  • 财政年份:
    2021
  • 负责人:
    Zhigang Xiao
  • 依托单位:
MRI: Acquisition of an Advanced E-Beam Evaporation Thin Film Deposition System for Research in Micro and Nanofabrication
  • 批准号:
    1229312
  • 项目类别:
    Standard Grant
  • 资助金额:
    $21.24万
  • 财政年份:
    2012
  • 负责人:
    Zhigang Xiao
  • 依托单位:
海外基金