Formation of oxidation-resistant film on niobium based alloy using molten salt electrolysis

本研究的目的是通过研究离子在熔盐中的电化学行为来确定最佳的电解条件，以便利用熔盐电解法在Nb基合金表面形成抗氧化性的硅化物薄膜。结果发现，在较高的温度下(1173K是本研究的最佳温度)，形成的厚膜具有较低的电流密度(本研究的最佳电流密度为10 mA cm-2)。溶质浓度(硅源)不表现出明显的影响。在一定条件下，成功地获得了厚度为55~70微米的NbSi2薄膜。

The purpose of this study is determining optimum electrolytic condition by investigating the electrochemical behavior of ions in molten salt in order to form an oxidation-resistant silicide film on Nb based alloy using molten salt electrolysis. As a result, it is found that thick film forms with lower current density (10 mA cm-2 is the best in this study) at higher temperature (1173 K is the best in this study). The concentration of solute (silicone source) does not show significant effect. NbSi2 film with a thickness of 55 to 70 micron was successfully obtained in a certain condition.