Active Probe for On-Wafer SiGe HBT Device Characterization up 750 GHz (APSiCa)

APSiCa项目旨在开发频率范围为220至750 GHz的有源毫米波探测器。然后，这些探测器将用于对所开发的HBT模型进行表征、建模和验证。与目前使用的探测方法不同，所提出的解决方案使用了一种新的接触。此外，必要的频率扩展器(或者反射计)将直接集成到拟议的探测设备中。因此，可以避免使用笨重的外部频率扩展器的困难的测量设置。特殊的设计允许待测量的晶片上结构的紧密接触，并避免了从一个端口到另一个端口的串扰或耦合。由于探头尖端的布置，可以实现更高的放置精度以及晶片上测量的重复性。通过将频率扩展器直接集成到建议的探测设备中，不再需要困难的测量设置或任何特殊设备。通过遵循这一想法，网络分析仪可以直接连接到所提出的探测设备，而不是笨重的外部频率扩展器。对于集成了反射计的探测设备，昂贵的网络分析仪可以用一个简单的处理电子设备来取代。在开发探测装置的同时，现有的紧凑型晶体管模型将扩展到更高的频率。目前现有的模型是根据低频测量得出的，通常没有对110 GHz以上的频率进行验证。扩展到更高频率的模型然后可以通过使用所建议的探测设备进行测量来评估。对于当前使用的探测方法可用的较低频率，可以使用两种解决方案来执行测量。因此，性能评估以及与当前使用的探测方法的比较成为可能。

The project APSiCa aims at developing active mm-wave probes for the frequency range 220 to 750GHz. These probes will then be used for characterization, modeling and verification of the developed models of HBTs. In contrast to the currently used probing approach, the proposed solution uses a novel contacting. Additionally, the necessary frequency extenders (alternatively reflectometers), will be integrated directly into the proposed probing device. Thus, a difficult measurement setup using bulky, external frequency extenders can be avoided. The special design allows for a compact contacting of the on-wafer structures to be measured and avoids crosstalk or coupling from one port to the other. Due to the arrangement of the probe tips, a higher placement accuracy as well as repeatability for on-wafer measurements can be achieved. By integration of the frequency extenders directly into the proposed probing device, no difficult measurement setup or any special equipment is needed anymore. By following this idea, a network analyzer can be connected directly to the proposed probing device instead of bulky external frequency extenders. For the probing device with integrated reflectometers, the expensive network analyzer can be replaced by a simple processing electronic. In parallel to the development of the proposed probing device, existent compact transistor models will be extended to higher frequencies. The currently existing models are deduced from low frequency measurements and are usually not verified for frequencies above 110GHz. The models extended to higher frequencies can then be evaluated by measurements with the proposed probing device. For lower frequencies, for which the currently used probing approach is available, measurements can be performed with both solutions. Thus, a performance evaulation as well as a comparison to the currently used probing approach becomes possible.