Spin-Hall effect in 3D- and 2D-hole systems

自旋-霍尔效应是由电荷电流产生横向纯自旋电流，这是自旋-轨道相互作用的结果，例如在半导体中。这种自旋电流反过来可以产生可探测的电场（逆自旋霍尔效应）。在我们的提案中，我们计划探索三（3D）和二维（2D）空穴系统中的自旋霍尔效应。通过在基于GaAs的异质结中使用p-epilayers和高迁移率2D空穴系统（2DHS），我们重点研究了三种几何形状，即“h几何形状”、“自旋注入几何形状”和霍尔棒状几何形状，以电方式探测自旋霍尔效应。在这个优先计划的最后阶段，我们特别强调后两个几何形状。这里，霍尔几何是一种新的附加几何，可以认为是Awschalom光学实验的电模拟。

The spin-Hall effect is about the generation of a transverse pure spin current by an electrical charge current as a consequence of spin-orbit interaction in, e.g., semiconductors. This spin current in turn can generate a detectable electric field (inverse spin-Hall effect). In our proposal we plan to explore the spin-Hall effect in three (3D) and two-dimensional (2D) hole systems. By employing p-epilayers and high mobility 2D hole systems (2DHS) in GaAs based heterojunctions we focus on three geometries, the "H-geometry", the "spin-injection-geometry" and a Hall bar geometry to probe the spin-Hall effect electrically. For the last phase of this Priority Program we put emphasis especially on the latter two geometries. Here, the Hall geometry is a new additional geometry which can be considered is an electrical analogue of Awschalom’s optical experiments.