Intermediate band solar cell based on transition metal substituted Indium thiospinels

本项目研究具有电子中间带的宽禁带硫尖晶石半导体In2S23，用于电荷载流子的光学多声子激发。它的目标是用这种新材料形成使用半导体异质结构的工作光伏器件。通过在In2S3中掺杂过渡金属原子M(M=Ti，V，Nb)，可以证明通过缺陷带吸收，能量低于In2S3基带的大量光子可以在导带和价带中产生自由电荷载流子。此外，还应证明，根据离域电子态理论，缺陷带不会导致获得的材料In2S3：M中电荷载流子的复合增加。通过结合透明接触层，在In2S3：M中应诱导出合适的势分布，从而导致有效的电荷分离。

The project investigates the wide band gap thiospinel semiconductor In2S23 with electronic intermediate band for optical multi phonon excitation of charge carriers. It aims at forming working photovoltaic devices using semiconductor heterostructures out of this new material. By doping In2S3 with transition metal atoms M (M = Ti, V, Nb) it shall be demonstrated that by defect band absorption a significant amounts of photon with energies below the fundamental band gap of In2S3 can generate free charge carriers in the conduction and valence bands. Furthermore it shall be demonstrated that the defect band, according to the theory of delocalised electronic states, does not lead to increased recombination of charge carriers in the obtained material In2S3:M. By combination of transparent contact layers a suitable potential profile shall be induced within In2S3:M giving rise to efficient charge separation.