Selective area growth of cubic group III-Nitrides on nano-patterned 3C-SiC (001) substrates

该项目的目标是在预图案化的3C-SiC（001）衬底上生长立方III族氮化物，降低位错密度。使用电子束光刻（EBL）和反应离子蚀刻（RIE），尺寸在50 nm尺度的V形和U形凹槽将被蚀刻到衬底中或通过电介质掩模。通过分子束外延（MBE），AlN和GaN将选择性地过生长具有纳米尺度尺寸的凹槽和开口。如果纳米结构具有高纵横比（深度与宽度之比>>1），则在开口或凹槽内将发生有效的位错过滤，并且在立方III族氮化物中位错密度将降低几个数量级。立方III族氮化物将通过高分辨率TEM、AFM、HRXRD、拉曼、阴极发光和显微光致发光来表征。此外，立方GaN外延层的聚结将在适当选择开口距离的结构上进行研究。

The aim of the project is the growth of cubic group III-Nitrides on pre-patterned 3C-SiC (001) substrates with reduced dislocation density. Using e-beam lithography (EBL) and reactive ion-etching (RIE) V-shaped and U-shaped grooves with dimensions in the 50 nm scale will be etched into the substrate or through dielectric masks. The grooves and openings with dimensions in the nanometer scale will be selectively overgrown with AlN and GaN via molecular beam epitaxy (MBE). If the nanostructures have a high aspect ratio (ratio depth to width >>1) an effective dislocation filtering shall occur within the openings or grooves and the dislocation density shall be reduced by several orders of magnitude in cubic group III Nitrides. The cubic group III-nitrides will be characterized by high resolution TEM, AFM, HRXRD, Raman, cathodoluminescence and micro-photoluminescence. In addition, the coalescence of cubic GaN epilayers will be studied on structures with suitable selection of the distances of the openings.