Ion-Situ observation of ion and radical effects on the semiconductor clean surface in Ultra High Vacuum STM system.

利用STM系统在超高真空条件下观察了离子和自由基对Si（100）表面薄膜生长的影响。在第一年建立了具有沉积室的STM。采用预处理后的Si（100）表面作为衬底。将Au线在真空室中蒸镀到10 μ Torr<-7>的真空度，或保持在10 μ Torr的<-4>Ar等离子体中蒸镀，将真空室中得到的样品转移到STM室中进行原位观察，在系统中进行了上述两种实验，以发现离子和自由基对样品影响的差异，实验结果总结如下：(1)真空沉积得到的Au薄膜表面粗糙，有针孔。在沉积的初始阶段，观察到Au颗粒沿着Si<100>的方向排列。(2)射频离子镀Au膜表面平整，无针孔。在沉积的初始阶段，观察到平均厚度为100埃的小Au颗粒平均分布在Si（100）表面上。上述说明中的差异被认为取决于Au离子和具有能量活性的自由基。此外，Au颗粒在初始晶体生长中的作用将在不久的将来被观察到。

The research is to observe the ion and radical effects on the growth of thin film deposited on the Si (100) surface by mean of STM system in Ultra High Vacuum. The STM having deposition chamber was set up in the first year. The Si (100) surfaces cleaned by pretreatment are used as substrates. Au wire is evaporated in the vacuum chamber evacuated to the order of 10^<-7> Torr vacuum, or kept in the order of 10^<-4> Torr Ar plasma.The specimen obtained in the vacuum chamber are transferred to the STM chamber to observe in situ.Two kinds of experiments in the above described are carried out in the system, in order to find the difference effected by ion and radical.The results observed in the experiments are summarized as follows.(1) The Au film obtained by vacuum deposition is observed to be rough surface with pin-holes. In the initial stage of deposition, Au particles are observed to be arranged along the <100> direction of Si.(2) The Au film obtained by RF ion plating is observed to be flat surface with non pin-hole. In the initial stage of deposition, small Au particles having mean 100 A thickness are observed to be distributed on the Si (100) surface meanly. The difference in the above description is considered to depend on Au ions and radicals having energitic activity. Moreover, the effect of Au particle in the initial crystal growth will be observed in the near future.