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Development of a surface gradient integrated profiler for the next generation high accuracy mirror

Development of a surface gradient integrated profiler for the next generation high accuracy mirror
开发下一代高精度反射镜表面梯度集成轮廓仪
批准号:
19206019
负责人:
ENDO Katsuyoshi
金额:
$30.45万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (A)
财政年份:
2007
资助国家:
日本
项目状态:
已结题
起止时间:
2007 至 2010

项目摘要

项目成果

ENDO Katsuyoshi的其他基金

相关文献

中文摘要
翻译
为了发展X射线自由电子激光源,实现纳米聚焦和高相干性的超精密非对称反射镜是必不可少的。极紫外光刻技术是一种很有发展前途的半导体器件制造技术,工业上需要高精度的非对称镜,研制表面梯度集成轮廓仪可用于下一代高精度非对称镜。新的轮廓仪是基于没有参考表面的激光的直线度。性能分析器的性能如下。反射镜轮廓的测量精度为1 nmPV。旋转角测量的分辨率为0.17 μrad。测量时间为5 min/样品。用轮廓仪测量了半径为400 mm的球面镜。二维轮廓测量的重复性小于1 nm。用该轮廓仪对R = 400 mm的球面镜进行了轮廓测量,并与用Fizeau干涉仪和三坐标测量机测量的结果进行了比较。通过使用轮廓仪测量的轮廓与通过使用其他轮廓仪测量的轮廓在约10 nm内一致。这些轮廓的差异分别基于系统误差。
英文摘要
In order to develop X-ray free electron laser sources, the ultraprecision asymmetric mirrors which realize nano-focusing and high coherence are indispensable. In industry, the high accurate asymmetric mirrors are required for extreme ultraviolet lithography which is a promising fabrication technology for semiconductor devices.A surface gradient integrated profiler can be developed for the next generation high accuracy asymmetric mirrors. The new profiler is based on the straightness of laser light without a reference surface. The performances of the profiler are as follows. The accuracy of measurement of the mirror profile is 1 nmPV. The resolution of measurement of the rotation angle is 0.17 μrad. And the time of measurement is 5 min/sample. A spherical mirror with a radius of 400 mm is measured by the profiler. The repeatability of two-dimensional profile measurements is less than 1 nm. The profile of the spherical mirror with R = 400 mm to be measured by using the profiler is compared with that measured by using the Fizeau interferometer and coordinate measuring machine. The profile measured by using the profiler coincides with that measured by using other profilers, within approximately 10 nm. These differences of profiles are based on systematic errors, respectively.
期刊论文(37)
专著(0)
科研奖励(0)
会议论文
Development of surface gradient integrated profiler-Precise coordinate determination of normal vector measured points by self-calibration method and new data analysis from normal vector tosurface profile-
表面梯度综合轮廓仪的开发-通过自校准方法精确确定法向矢量测量点的坐标以及从法向矢量到表面轮廓的新数据分析-
DOI: --
发表时间: 2009
期刊:
影响因子: --
作者: [T.Ueno, S.Tachibanada, Y.Higashi, K.Endo]
通讯作者: K.Endo
Time-Resolve X-ray Reflectom ettry in the Multiwavelength Dispersive Geometry
多波长色散几何中的时间分辨X射线反射技术
DOI: --
发表时间: 2009
期刊:
影响因子: --
作者: [Tadasgi.Matsushita, Etsuo Arakawa, Tetsuo Harada, Tadashi Hatano, Yasuo Higashi, York F.Yano, Yasuhiro Niwa, Yasuhiro Inada, Shusaku Nagano, Takahiro Seki]
通讯作者: Takahiro Seki
Surface Gradient Integrated Profiler for X-ray and EUV Optics
适用于 X 射线和 EUV 光学器件的表面梯度集成轮廓仪
DOI: --
发表时间: 2006
期刊: SR12006, Proc. of the Ninth International Conference on Synchrotron Radiation Instrumentation, May28-June2, 2006, DAEGU, EXCO, KOREA (In printing)
影响因子: --
作者: [Yasuo Higashi, Yuichi Takaie, Katsuyoshi Endo, Tatsuya Kume, Kazuhiro Enami, Kazuto Yamauchi, Kazuya Yamamura, Yasuhisa Sano, Kenii Ueno, Yuzo mori]
通讯作者: Yuzo mori
回転対称形状の超精密形状測定方法及びその装置
旋转对称形状超精密形状测量方法及装置
DOI: --
发表时间: 2009
期刊:
影响因子: --
作者: []
通讯作者:
共 25 条
    A new high speed nano-profiler using the normal vector tracing method for next generation ultraprecision mirrors.
    • 批准号:
      22226005
    • 项目类别:
      Grant-in-Aid for Scientific Research (S)
    • 资助金额:
      $130.12万
    • 财政年份:
      2010
    • 负责人:
      ENDO Katsuyoshi
    • 依托单位:
    Characterization of insulator surfaces after ultra-precision machining by STM/STS with high-frequency pulses
    • 批准号:
      13450056
    • 项目类别:
      Grant-in-Aid for Scientific Research (B)
    • 资助金额:
      $9.73万
    • 财政年份:
      2001
    • 负责人:
      ENDO Katsuyoshi
    • 依托单位:
    Experimental Study of Photochemical Deposition in a Condensed Phase on a Cryogenic Substrate
    • 批准号:
      07555041
    • 项目类别:
      Grant-in-Aid for Scientific Research (A)
    • 资助金额:
      $6.08万
    • 财政年份:
      1995
    • 负责人:
      ENDO Katsuyoshi
    • 依托单位:
    Elementary Analysis of a single Metallic Atom on Si Wafer Surface by STM/STS
    • 批准号:
      06452160
    • 项目类别:
      Grant-in-Aid for Scientific Research (B)
    • 资助金额:
      $4.61万
    • 财政年份:
      1994
    • 负责人:
      ENDO Katsuyoshi
    • 依托单位: