Research on nano-scale semiconductor devices based on the electronic properties of atomic-scale silicon crystals

研究了纳米硅基半导体器件的界面粗糙度、掺杂分布起伏和表面电位变化对器件性能的影响。因此，在材料和器件水平上对抑制统计变异性有了深刻的理解。这些结果为基于原子尺度硅晶体的电子特性开发未来纳米尺度半导体器件提供了指导。

The influences of the interface roughness, the dopant distribution fluctuation and the surface potential variability on the device performance of nano-scale Si-based semiconductor devices were investigated. As a result, a deep understanding of suppressing the statistical variability was obtained in both material and device levels. These results indicate the guideline for developing the future nano-scale semiconductor devices based on the electronic properties of atomic-scale silicon crystals.