Detection of spin polarization in supercurrent using quantum devices

为了获得低势垒界面，采用新技术制备了与InAs二维电子气体的超导结。在低温下，我们可以在几个结上观察到安德烈夫反射和超电流。为了控制超导结的输运性质，将超导电极连接在InAs线上，形成交叉结构。在这种结构中，我们成功地控制了Andreev反射、Andreev束缚态和超电流，方法是将电荷电流和自旋电流施加到交集处。此外，我们制备了超导结和量子点接触的杂化结构，并通过分子束外延生长出稀磁半导体InFeAs，以改变邻近诱导库珀对自旋的配对对称性。

Superconducting junctions with InAs two-dimensional electron gas were fabricated using new techniques in order to obtain low barrier interface. We could observe Andreev reflection and supercurrent on several junctions at low temperature. In order to control the transport properties of the superconducting junctions, superconducting electrodes are attached to the InAs wire configuring cross structures. In such structures, we succeeded in controlling the Andreev reflection, Andreev bound states, and supercurrent by applying charge currents and spin currents to the intersection.Furthermore, we made a hybrid structure of superconducting junction and quantum point contact and grow dilute magnetic semiconductor InFeAs were grown up by molecular beam epitaxy, in order to change the pairing symmetry of the spins of proximity-induced Cooper pairs.