Control of 3-dimensional atomic arrangement by AFM and ALE, and preparation of artificial inorganic materials

利用带有导电悬臂梁的原子力显微镜，我们试图控制氧在二氧化钛表面的吸附和脱附。在1000 × 1000 nm的面积中，在O2气氛中以-3.0V的偏置电压扫描悬臂之后，形成高度为5 nm的条纹图案。条纹图案的空间分辨率不令人满意，例如，线宽为50 nm。谱线的增宽主要归因于原子力显微镜装置的x-y扫描仪的漂移。因此，我们尝试在20 x 20 nm的窄扫描区域中绘制字母“SY”和“KK”。在AFM形貌图中，在TiO 2表面上绘制高度为5 nm、线宽为5 nm的字母。“SY”和“KK”的字母也从导电图中得到证实。图案保持在O2或Ar气氛中，甚至在紫外线照射下。应当注意，通过在紫外线照射下施加10 V的正电压来去除图案的一部分。这一结果与理论计算结果一致 ...更多信息 当在耗尽条件下在TiO 2的价带中有效地产生空穴时，吸附在TiO 2表面上的氧分子被去除。>通过这些结果，我们可以在纳米尺度上控制吸附分子的空间排列。金属的沉积对于纳米电子器件的制造非常重要。金属沉积已经通过STM或AFM的金属电化学沉积进行了尝试。然而，由于电解质溶液的存在，金属电极的纳米级图案化不能通过电化学系统实现。在目前的工作中，铜电极的沉积是通过使用涂有CuI，这是铜离子的固体电解质的悬臂进行的。通过施加-10V的负电压，在TiO 2表面上形成线宽为50 nm的Cu电极。通过施加10 V的正电压去除沉积的Cu电极。我们可以建立一个基本的技术制造纳米电极。少

Using AFM with a conductive cantilever, we attempt to control the adsorption and desorption of oxygen on TiO2 surface. In an area of 1000 x 1000 nm, stripe patterns with a height of 5 nm were formed after a cantilever was scanned at bias voltage of -3.0V in O2 atmosphere. The spatial resolution of the stripe patterns was not satisfactory, e.g., the line width of 50 nm. The broadening of the lines can be mainly ascribed to the drift of a x-y scanner of the AFM apparatus. Thus, we tried to draw letters of "SY" and "KK" in a narrow scan area of 20 x 20 nm. In AFM topographies, the letters with height of 5 nm and line-width of 5 nm were drawn on the TiO2 surface. The letters of "SY" and "KK" were also confirmed from conductive maps. The patterns were maintained in either O2 or Ar atmosphere, and even under uv illumination. It should be noted that a part of the patterns was removed by applying a positive voltage of 10V under uv illumination. This result is consistent with the theoretical pr … More ediction that oxygen molecules adsorbed on the TiO2 surface are removed when holes are effectively generated in the valence band of TiO2 under the depletion condition. >From these results, we can control the spatial arrangement of adsorbed molecules at a nanoscale resolution.The deposition of metal is important for the fabrication of nanoscale electronic devices. The metal deposition has been attempted by electrochemical deposition of metal by STM or AFM. However, nanoscale patterning of metal electrodes was not realized by electrochemical systems because of the presence of the electrolytic solution. In the present work, the deposition of Cu electrode was performed by employing the cantilever coated with CuI which was solid electrolyte of Cu ions. The Cu electrode with line-width of 50 nm was formed on the TiO2 surface by applying a negative voltage of -10V. The deposited Cu electrode was removed by applying a positive voltage of 10V. We can establish a fundamental technique of the fabrication of nanoscale electrodes. Less