Atmospheric-pressure plasma processes for high-rate film formation applicable for thin crystalline Si solar cells

大气压（AP）等离子体工艺适用于薄晶硅太阳电池的形成。为了在600℃下用AP等离子体化学气相沉积法稳定生长Si外延薄膜，研制了一种新型水冷电极体系。该系统使SiH4的利用效率提高了2倍，实现了以更小的等离子体间隙抑制输入功率的高速率生长，并实现了原位掺杂外延的精确控制。采用AP He等离子体氧化Si，在400℃下生长出具有良好电性能的SiO2薄膜，表面钝化质量良好。在露天条件下开发了AP氩等离子体氧化法制备高质量的SiO2薄膜。

Atmospheric pressure (AP) plasma processes applicable for the formation of thin crystalline Si solar cells have been developed.For the stable growth of Si epitaxial films at 600 C by AP plasma chemical vapor deposition, a new water cooled electrode system was developed. By using this system, 2 times higher utilization efficiency of SiH4 than the previous one, the high-rate growth with the suppressed input power using a smaller plasma gap, and the precise control of in-situ doping epitaxy were achievable.SiO2 films with good electrical properties were grown at 400 C by AP He plasma oxidation of Si, and a good surface passivation quality was demonstrated. AP Ar plasma oxidation process under an open air condition has also been developed to form high quality SiO2 films.