Spin-valley information and energy transport via directed exciton currents in two-dimensional semiconductors

该项目旨在实现一种新的创新方式，在新型二维半导体材料中引入电荷中性激子态的能量势，以便通过光学注入激子产生自旋和谷信息量子的受控传输。使用原子级薄半导体的原型平台，其中强束缚激子在室温及更高温度下是稳定的，我计划通过利用相邻的预图案化衬底和磁性材料的局部邻近效应来创建激子能量景观的梯度。这将允许发射定向激子电流，这些激子电流相对于它们的自旋谷态被进一步有意地控制和操纵，有效地引入一个有趣的系统来研究迷人的基本物理效应，同时保持将其标记为未来量子计算应用的潜在平台的基本属性。

The project is aimed to realize a new and innovative way of introducing energy potentials for charge-neutral exciton states inside novel two-dimensional semiconductor materials in order to generate controlled transport of spin and valley information quanta through optically injected excitons. Using the prototypical platform of atomically thin semiconductors, where the strongly bound excitons are stable at room temperature and beyond, I plan to create gradients in the excitonic energy landscape by utilizing local proximity effects through adjacent, pre-patterned substrate dielectrics and magnetic materials. This will allow to launch directed exciton currents that are further deliberately controlled and manipulated with respect to their spin-valley states, effectively introducing an intriguing system to study fascinating fundamental physical effects while holding essential properties that mark it as a potential platform for future quantum-computing applications.