Hexagonal boron nitride for deep ultraviolet device applications

该项目计划研究用于高性能深紫外(UV)发光二极管(LED)的替代材料六方氮化硼的生长。深紫外光LED是一种坚固耐用且高度便携的设备，可取代传统的汞/氚紫外线光源，并在水或空气消毒、光皮肤治疗、秘密通信和生化制剂识别方面有应用。然而，尽管世界各国在开发氮化镓深紫外光LED方面做出了重大努力，但其效率仍然非常低。了解六方氮化硼的基本生长、掺杂和合金化机制将使我们能够设计它的性质并创造出高效器件。

This project plans to investigate the growth of an alternative material, hexagonal boron nitride, for use in high performance deep-ultraviolet (UV) light-emitting diodes (LEDs). Deep-UV LEDs are robust and highly portable devices that replace traditional mercury/deuterium-based UV sources, and have applications in water or air sterilisation, photo-dermal therapy, covert communication and bio-chemical agent identification. However, despite major worldwide effort in the development of aluminium gallium nitride deep-UV LEDs, their efficiency is still extremely low. Understanding the fundamental growth, doping and alloying mechanisms of hexagonal boron nitride will allow us to engineer its properties and create high-efficiency devices.