Inductively Coupled Plasma Chemical Vapour Deposition (ICP-CVD)

我们申请了电感耦合等离子体化学气相沉积（ICP-CVD）系统，用于沉积高质量的氧化硅、氮化硅和氮化氧硅薄膜。该设备将大大扩展纳米结构技术与分析研究所现有的基础设施，特别是在室温过程和400°C的高温过程中。新的过程将被几个研究小组用于许多项目，从而开辟了我们以前无法调查的领域。对于申请人的许多科学研究方面，高质量的SiO2层起着关键作用，例如在微镜或微快门阵列的技术平台中用作隔离层。此外，对于温度敏感的衬底或表面（例如，图案化聚合物或磁性薄膜系统），在非常低的温度下沉积对于避免结构损坏至关重要。这同样适用于通常通过光刻胶进行的剥离工艺，低温是必不可少的，这样光刻产生的图案才不会丢失。

We apply for an inductively coupled plasma chemical vapor deposition (ICP-CVD) system for the deposition of very high-quality silicon oxide, silicon nitride and silicon oxynitride thin films. This device will significantly extend the existing infrastructure at the Institute of Nanostructure Technology and Analytics, especially by room temperature processes and high temperature processes at 400°C. The new processes would be used by several research groups in numerous projects, thus opening up areas that we could not investigate before. For many scientific research aspects of the applicants, high-quality SiO2 layers play a key role, e.g. when used as isolation layers within the technology platform of micromirror or microshutter arrays. In addition, for temperature-sensitive substrates or surfaces (e.g., patterned polymers or magnetic thin film systems), deposition at very low temperatures is crucial to avoid damaging of the structures. The same applies to lift-off processes, which are usually carried out via photoresists, were low process temperatures are essential so that the patterns generated lithographically will not get lost.