Ultra-high vacuum electron microscope study on Micro-processes of surface and crystal growth.
Ultra-high vacuum electron microscope study on Micro-processes of surface and crystal growth.
批准号:
59420048
负责人:
TAKAYANAGI Kunio
金额:
$22.98万
依托单位国家:
日本
项目类别:
Grant-in-Aid for General Scientific Research (A)
财政年份:
1984
资助国家:
日本
项目状态:
已结题
起止时间:
1984 至 1986
中文摘要
一个新的高分辨率超高压(超高压真空)电子显微镜已经开发出来用于原子级分辨率的原位表面研究。显微镜具有<10^(-8)>真空度<100 ° C后烘烤的水平,并具有0.22纳米的分辨率。由于沉积设施、金属和半导体材料被沉积在显微镜中的特定位置上的底层表面位置。表面处理,然后在传输和反射电子显微镜和差异中成像,我们为Si(111)7 x7重建和相位转换提供原位表面研究,用于Si表面上的金属吸收和金属簇。由于传输电子差异,重新构建的Si(111)7 x7表面被发现具有二聚体原子堆叠故障(DAS)结构。通过反射电子显微镜观察到的7 x7表面的Ag、Au、Cu和Al的吸附过程。表面的步骤已经在核站点找到了工作。Si(111)7 x7过程的相位转换是由高分辨率反射显微镜观察的, 2.3纳米间隔的超晶格框架被解析。“7 x7和”1 x1“结构was found to be vary narrow throughout the transition process”。在添加这些研究、结构和动态行为的集群将使少数几个Au原子在原子水平上可见的多十个。高分辨率超高压电子显微镜,这是基本和应用表面科学的有用方法。
英文摘要
A new high resolution UHV (ultra-high vacuum ) electron microscope has been developed for in-situ surface study at atomic level resolution. The microscope has the vacuum of <10^(-8)> level after baking at 100 ゜ C and the resolution of 0.22 nm. With deposition facilities, metals and semiconductor materials were deposited on substrate surfaces places at the specimen position in-situ in the microscope. Surface processes, then, are imaged in transmission and reflection electron microscopy and diffraction.We performed in-situ surface studies for Si(111)7x7 reconstruction and the phase transition, for metal adsorption on Si surface and for metal cluster. By transmission electron diffraction, the reconstructed Si(111)7x7 surface was found to have dimer adatom stacking-fault (DAS) structure. Adsorption processes of Ag, Au, Cu and Al on the 7x7 surface were observed by reflection electron microscopy. Surface steps were found to work as the nucleation site. Phase transition of Si(111)7x7 process was observed by high resolution reflection microscopy, 2.3 nm spaced superlattice fringes being resolved. The phase boundary between the 7x7 and "1x1" structure was found to be vary narrow throughout the transition process. In addition to these studies, structures and dynamical behavior of clusters consisting a few to several tens of Au atoms were seen at atomic level.The high resolution UHV electron microscopy, thus, is useful for basic and applied surface science.
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高柳邦夫: Journal of Microscopy. 136. 287-298 (1984)
高柳邦夫:显微镜杂志 136. 287-298 (1984)
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高柳邦夫,谷城康眞: Phys.Rev.B. 34. 1034-1040 (1986)
高柳邦夫、谷城康正:Phys.Rev.B 34. 1034-1040 (1986)
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K. Takayanagi:"Surface atomic structure study by UHV-electron microscopy and diffraction." Proc. <XI> th Int. Cong. on Electron Microscopy,. 1,. 1133-1136 ((1986))
K. Takayanagi:“通过超高真空电子显微镜和衍射研究表面原子结构。”
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T. Nakayama, K. Takayanagi, Y. Tanishiro, K. Yagi:"Transmission electron diffraction analysis of the Si(001) 2 X1 reconstructed surface:" Proc. <XI> th Int. Cong. on Electron Microscopy,. 1,. 1343-1344 ((1986))
T. Nakayama、K. Takayanagi、Y. Tanishiro、K. Yagi:“Si(001) 2 X1 重建表面的透射电子衍射分析:”Proc。
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谷城康眞,高柳邦夫,八木克道: Journal of Microscopy. 142. 211-221 (1986)
Yasumasa Tanishiro、Kunio Takayanagi、Katsumichi Yagi:显微镜杂志 142. 211-221 (1986)。
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共 37 条
Angle Resolved Spectroscopic Observation of Electron Beam induced Radiation from Nano-Structures excited by Low-Energy Electron Nano-probe
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财政年份:2007
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Observation of quantum effect of catalyst activity of Gold Nanoisland / MO_x
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财政年份:2004
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Quantum Contact
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批准号:12002005
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资助金额:$229.44万
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财政年份:2000
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Study of Nano-fabrication and Tunneling Phenomenon of Nanowires at Tip-Surface studied by UHV electron microscoopy
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批准号:09304036
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资助金额:$22.46万
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财政年份:1997
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Development of scanning micro-evaporator for the study of SiGeC
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财政年份:1994
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Schottrey barrier height of epitaxial interface studied by UHV-electron microscope
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资助金额:$4.03万
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财政年份:1992
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负责人:TAKAYANAGI Kunio
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依托单位:
Development of STM for structure analysis of surfaces
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批准号:61850118
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项目类别:Grant-in-Aid for Developmental Scientific Research
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资助金额:$8.96万
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财政年份:1986
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负责人:TAKAYANAGI Kunio
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依托单位: