Schottrey barrier height of epitaxial interface studied by UHV-electron microscope

特高压电镜研究外延界面肖特雷势垒高度

• 批准号: 04452087
• 负责人: TAKAYANAGI Kunio
• 金额: $ 4.03万
• 依托单位: Tokyo Institute of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (B)
• 财政年份: 1992
• 资助国家: 日本
• 起止时间: 1992 至 1993
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-04452087/
• 关键词: ultra-high vacuum electron microscope; epitaxy; Schottkey barrier; エピタクシャル界面; 超高真空電子顕微鏡法; 原子スケール界面構造; シリコン・金属界面

Structure of metal interfaces depends on deposition conditions such as substrate temperature. Different interface strucutre interface electron states (MIGS state), and thus, is suposed to change Schottkey barrier hight of the interface. The aim of the present research is crarify relationship between the interface structure and Schottkey barrier hightWell-defined interfaces are made by in-situ deposition in an ultra-high vacuum electron micoscope, where surface and interface strucutres before and after the deposition of metal on clean silicon surfaces are analyzed by reflection electron microscopy or by transmissionelectron microscopyThe interfaces formed by Ag or Au on Si(111) 7x7 surface are known to be /3x/3 structure at high temperature substrate, while was found to be 7x7 (without adatom) at temperatures lower than 200CThe interface structure of Sn on Si(100)2x1 surface was found to have the dimer structure, the surface reconstruction of the Si(100) has been frozen at the Ag-Si interfaceTo measure the Schottkey barrier hight of these interfaces a new TEM holder was designed, which has a movable electrode and a specimen to be located close to the electrode

金属界面的结构取决于沉积条件，如衬底温度。不同的界面结构产生界面电子态（MIGS态），从而改变界面的肖特基势垒高度。本研究的目的是阐明界面结构与肖特基势垒之间的关系，在超高真空电子显微镜中原位沉积得到了界面结构清晰的界面，其中通过反射电子显微镜或透射电子显微镜分析清洁硅表面上沉积金属之前和之后的表面和界面结构Si（111）上由Ag或Au形成的界面7 × 7表面在高温下为/3x/3结构，而在高温下为7 × 7 Sn在Si（100）2x 1表面的界面结构为二聚体结构，Si（100）的表面重构被冻结在Ag-为了测量这些界面的肖特基势垒高度，设计了一种新的TEM保持器，它具有一个可移动的电极和一个位于电极附近的样品

项目成果

A.Shibata, Y.Kimura and K.Takayanagi: "Si(111)/3x/3-Au growing on 7x7 surface" Surface Sci. Letters. 273. L430-L434 (1992)

A.Shibata、Y.Kimura 和 K.Takayanagi：“Si(111)/3x/3-Au 在 7x7 表面上生长”表面科学。

Y.Haga K.Takayanagi: "Single Atom Imaging in High-resolution UHV Electron Microscopy" Ultro microscopy. 45. 95-101 (1992)

Y.Haga K.Takayanagi：“高分辨率 UHV 电子显微镜中的单原子成像”Ultro 显微镜。

Y.Kimura and K.Takayanagi: "Incommensurate phase of Sn/Sn(100) studied by high-resolution reflection electron micoroscopy" Surface Sci. 283. 349-354 (1993)

Y.Kimura 和 K.Takayanagi：“通过高分辨率反射电子显微镜研究 Sn/Sn(100) 的不通约相”表面科学。

Y.Kimura,K.Takayanagi: "Incommensurate phase of Sn/si(100)studied by HR-REM" Surface Sci.283. 349-354 (1993)

Y.Kimura、K.Takayanagi：“HR-REM 研究的 Sn/si(100) 的不通约相”Surface Sci.283。

A.Shibata,K.Takayanagi: "Restructuring of the reconstructed Si(111)7×7 surface by metal(Au,Ag)deposition" Jpn.J.Appl.Phys.32. 1385-1388 (1993)

A. Shibata、K. Takayanagi：“通过金属（Au,Ag）沉积重建 Si(111)7×7 表面”Jpn.J.Appl.Phys.32 1385-1388 (1993)。