Schottrey barrier height of epitaxial interface studied by UHV-electron microscope

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Structure of metal interfaces depends on deposition conditions such as substrate temperature. Different interface strucutre interface electron states (MIGS state), and thus, is suposed to change Schottkey barrier hight of the interface. The aim of the present research is crarify relationship between the interface structure and Schottkey barrier hightWell-defined interfaces are made by in-situ deposition in an ultra-high vacuum electron micoscope, where surface and interface strucutres before and after the deposition of metal on clean silicon surfaces are analyzed by reflection electron microscopy or by transmissionelectron microscopyThe interfaces formed by Ag or Au on Si(111) 7x7 surface are known to be /3x/3 structure at high temperature substrate, while was found to be 7x7 (without adatom) at temperatures lower than 200CThe interface structure of Sn on Si(100)2x1 surface was found to have the dimer structure, the surface reconstruction of the Si(100) has been frozen at the Ag-Si interfaceTo measure the Schottkey barrier hight of these interfaces a new TEM holder was designed, which has a movable electrode and a specimen to be located close to the electrode