Development of scanning micro-evaporator for the study of SiGeC
开发用于 SiGeC 研究的扫描微蒸发器
基本信息
- 批准号:06402024
- 负责人:
- 金额:$ 23.23万
- 依托单位:
- 依托单位国家:日本
- 项目类别:Grant-in-Aid for Scientific Research (A)
- 财政年份:1994
- 资助国家:日本
- 起止时间:1994 至 1996
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
In recent years deivice sizes hve been decreased to nano-meter scale dimensions, and mesoscopic properties of electrons have come to be important. In these devices, it is certainly important to controle the electron scattering at the interfaces. The defects at the interface interfare the phase of the electorons and afect the electron transport in the devices. In this research we have aimed to develop a miniaturized evaporator to make a well defined nano-stuructures on atomically flat surfaces, to see any effect of the electron transport from the nano-structures.We designed a specific specimen holder for nano-structure fablication. The specimen holder has a miniaturized STM,on top of which an evaporant can be attached, and a specimen faced to the STM tip. The specimen holder is used for the ultra-high vacuum electron microscope (UHV-EM) to observe any nano-structures formed on the specimen surface.We used a silicon crystal as a substrate and a tungsten tip as an evaporant. When the tip was approached to the sample surface so close as 1 nm, and field of a few eV was applied between the tip and the sample, we found that a tungsten droplet was desorped from the tip side to be deposited on the substarte. This field evaporation technique for a micro-area deposition to produce nano-wires on the silicon surface was found to be not enough to wires of uniform thickness, because of poor controle of the field strength on the tungsten tip.Anyway, we have succeeded to approach the evaporant to a sumple surface as close as a few nm, the approaching process being observed directly by electron microscopy. The scanning capability of the evaporant by STM allow us to form nano-structures, which are also observable by reflection electron microscopy.The present reseach showed a possibility of nano-scale fablication on an atomically flat and clean surface.
近年来,电子器件的尺寸已经减小到纳米级,电子的介观性质变得非常重要。在这些器件中,控制界面处的电子散射是非常重要的。界面缺陷干扰电子的相位,影响电子在器件中的输运。在本研究中,我们的目标是开发一种小型化的蒸发器,在原子级平坦的表面上制作出定义明确的纳米结构,以观察电子从纳米结构中传输的任何影响。样品保持器具有小型化的STM,在其顶部可以附着蒸发物,并且样品面向STM尖端。样品保持器用于超高真空电子显微镜(UHV-EM),以观察样品表面形成的纳米结构。我们使用硅晶体作为衬底,钨尖端作为蒸发剂。当针尖靠近样品表面1 nm时,在针尖和样品之间施加几eV的电场,我们发现钨液滴从针尖侧解吸并沉积在衬底上。由于钨针尖上的场强控制不好,这种场蒸发技术在硅表面上微区沉积纳米线的方法不足以制备均匀厚度的纳米线,但我们成功地将蒸发物接近到几nm的小表面,并用电子显微镜直接观察了接近过程。STM对蒸发物的扫描能力使我们能够形成纳米结构,这些结构也可以通过反射电子显微镜观察到。目前的研究表明,在原子级平坦和清洁的表面上进行纳米级制造的可能性。
项目成果
期刊论文数量(25)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
M.Okamoto, K.Hashimoto,and K.Takayanagi: "Cube-octahedral B12 clusters in silicon crystal" Applied Physics Letters. 70. 978-980 (1996)
M.Okamoto、K.Hashimoto 和 K.Takayanagi:“硅晶体中的立方八面体 B12 簇”应用物理快报。
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
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- 通讯作者:
K.Takayanagi, Y.Okamoto, Q.Ru ,H.Onishi and M.Okamoto: "UHV-HRTEM of Reconstructed Nano-Structure Surface" Journal of Surface Analysis. 3. 228-232 (1997)
K.Takayanagi、Y.Okamoto、Q.Ru、H.Onishi 和 M.Okamoto:“重构纳米结构表面的 UHV-HRTEM”表面分析杂志。
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
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- 通讯作者:
M.Mitome and K.Takayanagi: "Optimum Condition of Convergent Beam Illumination for observation of local structure by high resolution transmission electyron microscopy" Ultramicroscopy. 62. 123-131 (1996)
M.Mitome 和 K.Takayanagi:“通过高分辨率透射电子显微镜观察局部结构的会聚光束照明的最佳条件”超显微镜。
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
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- 通讯作者:
Q.Ru, M.Okamoto, Y.Kondo, and K.Takayanagi: "Attraction and Orientation Phenomena of Bulcky Onions Formed in a Transmission Electron Microscope" Chmical Physics Letters. 259. 425-431 (1996)
Q.Ru、M.Okamoto、Y.Kondo 和 K.Takayanagi:“透射电子显微镜中形成的大洋葱的吸引和定向现象”化学物理快报。
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
- 作者:
- 通讯作者:
K.Takayanagi, Y.Okamoto, Q.Ru, H.Onishi and M.Okamoto: "UHV-HRTEM of Reconstructed Nano-Structure Surface" Journal of Surface Analysis. 3. 228-232 (1997)
K.Takayanagi、Y.Okamoto、Q.Ru、H.Onishi 和 M.Okamoto:“重建纳米结构表面的 UHV-HRTEM”表面分析杂志。
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- 影响因子:0
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TAKAYANAGI Kunio其他文献
TAKAYANAGI Kunio的其他文献
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{{ truncateString('TAKAYANAGI Kunio', 18)}}的其他基金
Angle Resolved Spectroscopic Observation of Electron Beam induced Radiation from Nano-Structures excited by Low-Energy Electron Nano-probe
低能电子纳米探针激发纳米结构电子束诱导辐射的角分辨光谱观测
- 批准号:
19101004 - 财政年份:2007
- 资助金额:
$ 23.23万 - 项目类别:
Grant-in-Aid for Scientific Research (S)
Observation of quantum effect of catalyst activity of Gold Nanoisland / MO_x
金纳米岛/MO_x催化活性的量子效应观察
- 批准号:
16201020 - 财政年份:2004
- 资助金额:
$ 23.23万 - 项目类别:
Grant-in-Aid for Scientific Research (A)
Quantum Contact
量子接触
- 批准号:
12002005 - 财政年份:2000
- 资助金额:
$ 23.23万 - 项目类别:
Grant-in-Aid for Specially Promoted Research
Study of Nano-fabrication and Tunneling Phenomenon of Nanowires at Tip-Surface studied by UHV electron microscoopy
特高压电子显微镜研究纳米线尖端表面的纳米加工和隧道现象
- 批准号:
09304036 - 财政年份:1997
- 资助金额:
$ 23.23万 - 项目类别:
Grant-in-Aid for Scientific Research (A)
Schottrey barrier height of epitaxial interface studied by UHV-electron microscope
特高压电镜研究外延界面肖特雷势垒高度
- 批准号:
04452087 - 财政年份:1992
- 资助金额:
$ 23.23万 - 项目类别:
Grant-in-Aid for General Scientific Research (B)
Development of STM for structure analysis of surfaces
开发用于表面结构分析的 STM
- 批准号:
61850118 - 财政年份:1986
- 资助金额:
$ 23.23万 - 项目类别:
Grant-in-Aid for Developmental Scientific Research
Ultra-high vacuum electron microscope study on Micro-processes of surface and crystal growth.
超高真空电子显微镜表面微观过程及晶体生长研究。
- 批准号:
59420048 - 财政年份:1984
- 资助金额:
$ 23.23万 - 项目类别:
Grant-in-Aid for General Scientific Research (A)
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