Research on ultra-high-speed operation of semiconductor optical integrated circuits

本研究的主要目的是研究半导体光集成电路的超高速调制方法，并阐明高速光调制器、光隔离器等光器件单片集成的可能性。本研究项目所取得的具体成果总结如下：我们制作了高速光调制器和光光源。利用量子受限场效应证明了超高速运行发光三极管的可能性。利用谐振型电极光调制器实现了超高频波段的超高速光调制。我们从理论上指出，通过增加量子维度（2维：量子线，3维：量子盒），可以将增益和折射率变化增大一个数量级。提出了量子盒型光开关/调制器，并从理论上证实了其低插入损耗的高速运行。首次实现了脉冲（77K）条件下GaInAs/GaInAsP/InP量子线激光器的激光操作。为实现光学集成电路，研制了新型半导体激光器。在109K脉冲条件下，获得了波长为576nm的GaInP/AlInP-MQW激光器的激光操作。在硅衬底上实现了AlGaAs/GaAs激光器的连续工作。采用一种新型的分布式反射器（DR）型动态单模激光器实现了高效率的单面输出特性。改进了集成型半导体激光器的性能。为实现动态单模激光器的稳定单模工作，提出并制作了增益耦合型DFB激光器。从理论上和实验上阐明了量子阱激光器产生超短脉冲的结构依赖性。采用表面发射激光器制备了二维激光阵列。

The main purpose of this research project is to investigate the method of ultra high speed modulation of semiconductor optical integrated circuit and to clarify the possibility of monolithic integration of optical devices such as high speed optical modulator and optical isolator. Specific results obtained in this research project are summarized as follows.We have fabricated high speed optical modulator and optical light sources. We have proved the possibility of ultra-high-speed operation of light emitting triode using quantum confined field effect. We have demonstrated the ultra high speed optical modulation at ultra high frequency band using resonant type electrode optical modulator. We have theoretically pointed out that the gain and refractive index variation can be enlarged one order of magnitude by increasing the quantum dimension (2 dimension: quantum wire, 3 dimension: quantum box). The quantum box optical switch/modulator was proposed and the high speed operation with low insertion loss were theoretically confirmed. The lasing operation of GaInAs/GaInAsP/InP quantum wire laser at pulsed (77K) condition was realized for the first time.New type of semiconductor lasers were fabricated to realize optical integrated circuit. Lasing operation of GaInP/AlInP-MQW laser with wavelength of 576nm was obtained at pulsed condition (109K). CW operation of AlGaAs/GaAs laser on Si substrate was obtained. The single facet output properties for high efficiency operation was achieved with a novel Distributed Reflector (DR) type,dynamic single mode laser.The characteristics of integrated type semiconductor laser were improved. The gain coupling type DFB laser was proposed and fabricated to realize stable single mode operation of dynamic single mode laser. The structure dependence of quantum well laser for the generation of ultra short pulse was clarified theoretically and experimentally. The two dimensional laser array was fabricated with surface emitting laser.