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The phase diagrams of the CdS-CdSe-CdTe pseudoternary system at 708゚C, 758゚C and 808゚C

The phase diagrams of the CdS-CdSe-CdTe pseudoternary system at 708゚C, 758゚C and 808゚C
CdS-CdSe-CdTe伪三元体系在708℃、758℃和808℃时的相图
批准号:
02650488
负责人:
KATO Eiichi
金额:
$1.34万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for General Scientific Research (C)
财政年份:
1990
资助国家:
日本
项目状态:
已结题
起止时间:
1990 至 1991

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中文摘要
翻译
用X射线衍射仪研究了在708゚C、758゚C和808゚C温度下的Cd S-Cd Se-Cd Te伪三元系相图。样品在不同温度下分别进行了1000h的退火和淬火。在808゚闪锌矿类型的单相区、纤锌矿单相区和两个两相区。在758゚C和708゚的混合型单相区,利用努森电池-质谱仪组合的等温蒸发法,在688kW的温度下,测定了Cd S-Cd Se-Cd Te系统中Cd S-Cd Se-Cd Te系统中富Cd侧的相界面。通过测量离子强度随组成的变化来确定相界面。
英文摘要
The phase diagrams of the CdS-CdSe-CdTe pseudoternary system at 708゚C, 758゚C and 808゚C were investigated by X-ray diffraction measurement.The samples were annealed at each temperatures for 1000 hours and quenched.At 808゚Czincblende type single-phase region, wurtzite single-phase region and two two-phase regions exist.At 758゚C and 708゚Czincblend type single-phase region, wurtzite type single-phase region and a two-phase region exist.And an isothermal evaporation method by means of a Knudsen cell-mass spectrometer combination has been applied to the determination of the phase boundary of the CdS rich side in the CdS-CdSe-CdTe system at the temperature of 688゚C.The phase boundary was determined by measuring the change of ion intensities as a function of composition.
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A Study on the Subjects and Measures related to the Tourism Promotion in Boundary Island Area in Japan
  • 批准号:
    24611021
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
  • 资助金额:
    $3.49万
  • 财政年份:
    2012
  • 负责人:
    KATO Eiichi
  • 依托单位:
Studies on usage of journalistic resources for systematic Russian vocabulary building as the basis of effective communication.
  • 批准号:
    21720193
  • 项目类别:
    Grant-in-Aid for Young Scientists (B)
  • 资助金额:
    $2.75万
  • 财政年份:
    2009
  • 负责人:
    KATO Eiichi
  • 依托单位:
Effects of alloying elements on the formation of hydrogen blowholes during solidification of steel and cast iron
  • 批准号:
    63550514
  • 项目类别:
    Grant-in-Aid for General Scientific Research (C)
  • 资助金额:
    $1.34万
  • 财政年份:
    1988
  • 负责人:
    KATO Eiichi
  • 依托单位:
Activation of the Formation of Titanium Nitride Thin Film by Chemical Vapor Deposition
  • 批准号:
    61550502
  • 项目类别:
    Grant-in-Aid for General Scientific Research (C)
  • 资助金额:
    $1.22万
  • 财政年份:
    1986
  • 负责人:
    KATO Eiichi
  • 依托单位:
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