Activation of the Formation of Titanium Nitride Thin Film by Chemical Vapor Deposition
化学气相沉积活化氮化钛薄膜的形成
基本信息
- 批准号:61550502
- 负责人:
- 金额:$ 1.22万
- 依托单位:
- 依托单位国家:日本
- 项目类别:Grant-in-Aid for General Scientific Research (C)
- 财政年份:1986
- 资助国家:日本
- 起止时间:1986 至 1987
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
Firstly, experimental rate data on the chemical vapor deposition of boron by reduction of boron trichloride with hydrogen are analyzed. Tungsten was used as the substrate. Under surface reaction control regime, the reaction orders with respect to boron trichloride and hydrogen are one-third and one-half, respectively. By comparing these orders with those obtained from langmuir-hinshelwood type equations, the rate controlling mechanism has been suggested to be the desorption of hydrogen chloride from the substrate. Secondly, experimental rate data of chemical vapor deposition of titanium nitride from the reactant gases H_2, N_2 ant TiCl_4 were analyzed. Under surface reaction control regime, the deposition rate was in proportion to the square root of the partial pressures of hydrogen and nitrogen, respectively. The deposition rate decreased with increasing partial pressure of TiCl_4. By comparing these results with langmuir-hinshelwood type equations, it has been suggested that the probable rate-controlling step is the reaction of hydrogen atoms with nitrogen atoms on the reaction surface or the adsorption of hydrogen molecules and that of nitrogen molecules on the surface. The extent of surface coverage by these atoms is considered to have been reduced when the partial pressure of TiCl_4 is increased, due to competitive adsorption. Finally, the effects of light irradiation on the deposition rate of TiN were investigated under surface reaction control regime. The wave length of the light is 253.7 nm. The deposition rate with irradiation on the gases was smaller than that without irradiation. It is considered that TiCl_4 vapor becomes active with light irradiation and the extent of surface coverage by TiCl_4 is increased, and that by hydrogen and nitrogen which are reactants in the rate-controlling step has been reduced. When the substrate was irradiated, the activation of the formation of TiN was observed.
首先,分析了用氢气还原三氯化硼化学气相沉积硼的实验速率数据。使用钨作为基材。在表面反应控制方案下,三氯化硼和氢气的反应级数分别为三分之一和二分之一。通过将这些阶数与从 langmuir-hinshelwood 型方程获得的阶数进行比较,速率控制机制被认为是氯化氢从底物中的解吸。其次,分析了反应气体H_2、N_2和TiCl_4化学气相沉积氮化钛的实验速率数据。在表面反应控制方案下,沉积速率分别与氢和氮分压的平方根成正比。沉积速率随着TiCl_4分压的增加而降低。通过将这些结果与langmuir-hinshelwood型方程进行比较,表明可能的速率控制步骤是氢原子与反应表面上的氮原子的反应或氢分子和氮分子在表面上的吸附。当 TiCl_4 的分压增加时,由于竞争吸附,这些原子的表面覆盖程度被认为减少了。最后,在表面反应控制条件下研究了光照射对TiN沉积速率的影响。光的波长为253.7 nm。对气体进行照射的沉积速率比没有照射的沉积速率小。认为TiCl_4蒸气随着光照射而变得活跃,并且TiCl_4的表面覆盖程度增加,并且作为速率控制步骤中的反应物的氢和氮的表面覆盖程度减少。当基材受到辐射时,观察到TiN形成的活化。
项目成果
期刊论文数量(1)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Naruhiko,Nakanishi: "Kinetics of Chemical Vapor Deposition of Titanium Nitride" J. Electrochem. Soc.
Naruhiko,Nakanishi:“氮化钛化学气相沉积的动力学”J. Electrochem。
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- 影响因子:0
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KATO Eiichi其他文献
KATO Eiichi的其他文献
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A Study on the Subjects and Measures related to the Tourism Promotion in Boundary Island Area in Japan
日本分界岛屿地区旅游振兴相关课题及措施研究
- 批准号:
24611021 - 财政年份:2012
- 资助金额:
$ 1.22万 - 项目类别:
Grant-in-Aid for Scientific Research (C)
Studies on usage of journalistic resources for systematic Russian vocabulary building as the basis of effective communication.
研究使用新闻资源进行系统的俄语词汇建设,作为有效沟通的基础。
- 批准号:
21720193 - 财政年份:2009
- 资助金额:
$ 1.22万 - 项目类别:
Grant-in-Aid for Young Scientists (B)
The phase diagrams of the CdS-CdSe-CdTe pseudoternary system at 708゚C, 758゚C and 808゚C
CdS-CdSe-CdTe伪三元体系在708℃、758℃和808℃时的相图
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02650488 - 财政年份:1990
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$ 1.22万 - 项目类别:
Grant-in-Aid for General Scientific Research (C)
Effects of alloying elements on the formation of hydrogen blowholes during solidification of steel and cast iron
合金元素对钢和铸铁凝固过程氢气孔形成的影响
- 批准号:
63550514 - 财政年份:1988
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$ 1.22万 - 项目类别:
Grant-in-Aid for General Scientific Research (C)
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部分河口腹足动物副溶血性弧菌持续存在机制的流行病学研究
- 批准号:
59480088 - 财政年份:1984
- 资助金额:
$ 1.22万 - 项目类别:
Grant-in-Aid for General Scientific Research (B)
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