Fundamental Research on Ionized Cluster Beam Processes

我们一直在与AT&T贝尔实验室、新泽西理工学院和Ryode Island大学进行联合研究，由Grant在Monbus ho国际科学研究计划下对电离簇束(ICB)过程进行基础研究。这些小组对ICB过程的研究可以为每个小组提供重要和有用的结果。在研究期间获得的实验结果，即(1)扫描隧道显微镜(STM)对薄膜生长早期阶段的原子尺度观察，以及(2)最近对ICB源光束的详细成分的研究，使人们对ICB方法沉积的薄膜的特殊性质的起源有了新的理解。少量原子的存在引发了一系列新的薄膜生长步骤，并立即形成稳定的岛屿用于薄膜生长。此外，新开发了一种气体团簇离子源，并利用该装置产生了大小为数百到数千个分子的团簇。对于大团簇的撞击，我们观察到了通过注入、溅射和清洁过程修改的材料的独特性质。这些结果可应用于表面处理新技术的开发。

We have been doing Joint Research with AT & T Bell Laboratories, New Jersey Institute of Technology, and University of Ryode Island for Fundamental Research on Ionized Cluster Beam (ICB) Processes by Grant under The Monbusho International Scientific Research Program. The investigations of ICB processes by these groups could provide important and useful results to each group.The experimental results obtained during the research term;namely (1) atomic-scale observations by Scanning Tunneling Microscopy (STM) of the early stages of film growth, and (2) recent studies of the detailed composition of beams from ICB sources, have led to a new understanding of the origins of the extraordinary properties of thin films deposited by ICB methods. The presence of a small fraction of atoms is the form large clusters initiates a novel sequence of film growth steps staring with the immediate formation of stable islands for film growth.In addition, a gas cluster ion source was newly developed and clusters with the size range of several hundreds to thousands of molecules were generated with this apparatus. For impacts with large clusters, We observed unique properties of the materials modified by the implantation, sputtering, and cleaning processes. These results can be applied to the development of new technologies for surface treatment.