Optoelectronic Materials Based on Physical Chemistry
Optoelectronic Materials Based on Physical Chemistry
批准号:
03303008
负责人:
FUJISHIMA Akira
金额:
$5.95万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Co-operative Research (A)
财政年份:
1991
资助国家:
日本
项目状态:
已结题
起止时间:
1991 至 1993
中文摘要
展望即将到来的变化,在世纪,一个世纪被预测为“ge的光”,我们的所有成员都感兴趣的光有关的化学现象。我们在这一领域完成了一系列开创性的任务。目前,我们正在从事基础和应用研究,特别是在固体(半导体或金属)和溶液或气体之间的界面上,当光能施加到界面上时发生的现象。我们正在探索的系统显示出明显不同于任何一个阶段的特征,这有时会给我们观察意外现象的乐趣。我们最近的一些研究结果概括如下:STM和AFM,这些“原子观察”显微镜的纳米级化学研究,证明了他们的机制,功能和原理的高研究潜力。在该领域进行的研究中,STM用于直接观察层状化合物(显示电荷密度波)和电解质之间的界面。利用这些显微镜进行写入和擦除的信息记录材料的开发工作正在进行中。半导体薄膜的(光)化学反应金属化涉及各种绝缘衬底的金属化。正如我们在印刷电路板的金属化中所看到的那样,这是现代技术中的重要工艺之一。我们最近开发了一种新的金属化技术,该技术利用某些半导体薄膜的(光)化学反应。
英文摘要
Anticipating for the coming changes in the 21st century, a century predicted to be the "ge of light", all members of our group have been interested light-related chemical phenomena. We have accomplished a variety of pioneering tasks in this field. Currently, we are engaged in basic and applied studies on the phenomena specifically occurring at the interface between a solid(a semiconductor or metal)and a solution or a gas, upon the application of light energy to the interface. We are expliring system shows characteristics distinctly different from those of any one phase, which at times have given us the delight of observing an unexpected phenomenon. Some of our recent results are summarized as follows.Nanometer order chemical research with STM and AFM, these "atom-watching"mictoscopes prove their high research potential with their mechanisms, functions and pronciples. In a study performed in this area, an STM is used to directly observe the interface between a layred compound, exhibiting charge density waves and an electrolyte. Efforts in the development of information recording materials which uses these microscopes to write and erase are under way.Metallization by(phto)chemical reactions of semiconductor thin films, concerns the metallization of various insulating substrates. As we see typically in the metallization of printed circuit boards, thes is one of the important processes in modern technology. We have recently developed a new metallization technique that uses(photo)chemical reactions of a certain of semiconductor thin films.
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T.Ameriya: "Dynamics of Faradaic Processed in Polypyrrole/Polystirenesulfonate Composite Films in the Presence and Absence of a Redox Species in Aqueous Solutions" J.Phys Chem. 97(16). 4192-4195 (1993)
T.Ameriya:“在水溶液中存在和不存在氧化还原物质的情况下,在聚吡咯/聚苯乙烯磺酸盐复合膜中加工的法拉第动力学”J.Phys Chem。
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R.Cai: "Induction of Cytotoxicity by Photoーexcited TiO_2 Particles" Cancer Res.,.
R.Cai:“光激发TiO_2颗粒诱导细胞毒性”Cancer Res.,。
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S.Yoshihara: "Photoacoustic Detection of Pb Underpotential Deposition on Ag" Electrochimica Acta. 36. 1959-1961 (1991)
S.Yoshihara:“Ag 上 Pb 欠电位沉积的光声检测”《电化学学报》。
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Z.F.Liu: "Electrochemical Actinometry Using the Assembled Monolayer Film of an Azo Compound" Anal.Chem.64. 134-137 (1991)
Z.F.Liu:“使用偶氮化合物组装单层膜进行电化学光度测定”Anal.Chem.64。
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R.Cai: "Conversition of Photogenerated Superoxide Anion Into H_2O_2 in TiO_2 Suspension Systems" J.Electroanal.Chem.,.
R.Cai:“TiO_2悬浮体系中光生超氧阴离子转化为H_2O_2”J.Electroanal.Chem.,。
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共 28 条
Photocatalytic coating on the lacquer utilized for cultural assets such as the shrines and temples of Nikko
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批准号:16H03107
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$11.23万
-
财政年份:2016
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负责人:FUJISHIMA Akira
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依托单位:
Application for environmental purification by multi-channel TiO2-based photocatalytic nanotubes
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批准号:23350093
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$12.73万
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财政年份:2011
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负责人:FUJISHIMA Akira
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依托单位:
Development of new printing method using photocatalysis
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批准号:21654043
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项目类别:Grant-in-Aid for Challenging Exploratory Research
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资助金额:$2.16万
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财政年份:2009
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负责人:FUJISHIMA Akira
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依托单位:
Fabrication of photo-functional materials based on TiO2 nanofiber composites
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批准号:20350090
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$11.98万
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财政年份:2008
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负责人:FUJISHIMA Akira
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依托单位:
Highly Efficiency Solar Energy Conversion Using Photointerface System
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批准号:14050023
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项目类别:Grant-in-Aid for Scientific Research on Priority Areas
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资助金额:$97.22万
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财政年份:2002
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负责人:FUJISHIMA Akira
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依托单位:
Fundamental Science and Technology of Photofunctional Interfaces
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批准号:13050101
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项目类别:Grant-in-Aid for Scientific Research on Priority Areas
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资助金额:$65.22万
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财政年份:2001
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负责人:FUJISHIMA Akira
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依托单位:
Assembly of the photocatalytic membrane having mesoscopic structure
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批准号:12555184
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$8.51万
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财政年份:2000
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负责人:FUJISHIMA Akira
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依托单位:
New Trend in Photoelectrochemistry using Conductive Diamond Film
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批准号:11694133
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项目类别:Grant-in-Aid for Scientific Research (B).
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资助金额:$4.61万
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财政年份:1999
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负责人:FUJISHIMA Akira
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依托单位:
Photoelectrochemical Reduction of CD_2 using Diamond Electrode
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批准号:10480142
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项目类别:Grant-in-Aid for Scientific Research (B).
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资助金额:$8.83万
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财政年份:1998
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负责人:FUJISHIMA Akira
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依托单位:
Fundamentals of TiOィイD22ィエD2 photocatalysis for environmental purification
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批准号:09555268
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$8.96万
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财政年份:1997
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负责人:FUJISHIMA Akira
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依托单位:
Photoelectrochemical Reactions at Semiconductor Diamond Films
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批准号:08455392
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$4.99万
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财政年份:1996
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负责人:FUJISHIMA Akira
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依托单位:
Highly Efficient Hydrogen Formation using Photoexcited Semiconductro Surface
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批准号:06453200
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项目类别:Grant-in-Aid for General Scientific Research (B)
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资助金额:$5.31万
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财政年份:1994
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负责人:FUJISHIMA Akira
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依托单位:
Development of Novel functionalities in Some Photoelectrochromic Materials and their Application to a Display Device
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批准号:04505004
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项目类别:Grant-in-Aid for Developmental Scientific Research (A)
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资助金额:$23.04万
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财政年份:1992
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负责人:FUJISHIMA Akira
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依托单位:
High Density Memory System Using Organic Thin Film
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批准号:04453076
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项目类别:Grant-in-Aid for General Scientific Research (B)
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资助金额:$5.18万
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财政年份:1992
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负责人:FUJISHIMA Akira
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依托单位:
Photoelectrochemistry Using Semiconductor Electrodes Modified Chemically with Redox Enzymes
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批准号:03044046
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项目类别:Grant-in-Aid for international Scientific Research
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资助金额:$4.16万
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财政年份:1991
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负责人:FUJISHIMA Akira
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依托单位:
Redox Reactions and Pattern Formation by Using Photoexcited Semiconductor-Electrolyte Interfaces
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批准号:01850182
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项目类别:Grant-in-Aid for Developmental Scientific Research
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资助金额:$7.36万
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财政年份:1989
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负责人:FUJISHIMA Akira
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依托单位:
Investigation of Electron-Transfer Process on Photoexcited Heterogeneous Interface and Its New Application
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批准号:63470064
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项目类别:Grant-in-Aid for General Scientific Research (B)
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资助金额:$3.97万
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财政年份:1988
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负责人:FUJISHIMA Akira
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依托单位:
Investigation of Photo-degradation mechanism of semiconductor-organic material interface
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批准号:61850146
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项目类别:Grant-in-Aid for Developmental Scientific Research
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资助金额:$5.95万
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财政年份:1986
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负责人:FUJISHIMA Akira
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依托单位:
Efficient conversiton of light energy by using funational semiconductor surfaces
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批准号:60470078
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项目类别:Grant-in-Aid for General Scientific Research (B)
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资助金额:$3.14万
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财政年份:1985
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负责人:FUJISHIMA Akira
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依托单位: