PREPARATION OF SUPER PLASTICITY TITANIA BY CHEMICAL VAPOR DEPOSITION
PREPARATION OF SUPER PLASTICITY TITANIA BY CHEMICAL VAPOR DEPOSITION
批准号:
04555228
负责人:
KOMIYAMA Hiroshi
金额:
$4.54万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Developmental Scientific Research (B)
财政年份:
1992
资助国家:
日本
项目状态:
已结题
起止时间:
1992 至 1993
中文摘要
理论和实验表明,由纳米颗粒组成的陶瓷(即所谓的纳米陶瓷材料)克服了普通陶瓷材料的主要缺点--脆性,具有较高的韧性。陶瓷材料因其优异的耐热性和耐腐蚀性而被寄予厚望,但由于其脆性可靠性较低,还没有投入到实际材料中去。我们一直在进行基础性研究,以创造一种新的规模化生产技术来制备这种纳米陶瓷材料。本研究尝试用化学气相沉积(CVD)的方法来制备二氧化钛(TiO2)系纳米陶瓷材料的薄膜。在传统的二氧化钛化学气相沉积工艺中,我们使用的是四异丙氧基钛(TTIP),但我们发现用双(二异丙酮基)二异丙氧基钛(Ti(…)_2(O-IPR)_2)化合物取代TTIP,提高了反应的稳定性和控制性第二年,添加了锶、铅等新组份材料,并对其效果进行了检验。我们的实验结果表明,添加铅化合物减少了二次形核过程。目前最重要的问题是控制沉积薄膜的颗粒尺寸,这也是本研究的目的。一般认为,沉积薄膜的晶粒度主要受二次形核速率和薄膜生长速率的竞争。然而,这两种速率很容易被各种实验条件改变,因此对晶粒度的控制非常困难。在无二次成核的成膜过程中,初始成核密度和薄膜厚度可以控制薄膜的晶粒度。实验结果还表明,给出最合适的初始成核密度的固定实验条件和可自由选择的沉积时间提供了晶粒度的可控性。综上所述,我们阐明了在CVD陶瓷工艺中控制沉积薄膜晶粒度的新方法。较少
英文摘要
It has been shown theoretically and experimentally that ceramic consisted of nanometer size grains (so-called nano-ceramic materials) overcame the characteristics of brittle which is the main drawback of the normal ceramics materials, and had high toughness. There has been a high expectation of its application for superior heat resistance and corrosion resistance, however, ceramic materials have not been put into practical materials because of the lower reliability as brittleness. We have been trying to do fundamental studies to create a novel mass-productive technology to make such nano-ceramic materials.The film growth of titania (TiO_2) series nano-ceramic material was tried by chemical vapor deposition (CVD) method in this research. Titanium tetra iso-propoxide (TTIP) is used in the conventional TiO_2-CVD process, however we found that replacement of TTIP with bis(dipivaloylmetanoto) diisopropoxide titanium (Ti(DPM)_2(O-iPr)_2) compound increases stability of reaction and controlla … More bility.In the second year, the new component materials such as Sr and Pb was added and its effect was examined. Our experimental results revealed that the added Pb compound reduced the secondary nucleation process. The recent greatest important issue is to control the grain size of the deposited film, it's also the aim of this research. It's said generally that the grain size of the deposited film was dominated the competition of the secondary nucleation rate and the film growth rate. However, these two rates were changed easily by various experimental conditions, so the control of the grain size has very difficulty. In the film forming process without secondary nucleation, it's known that the initial nucleation density as well as film thickness can dominate the grain size of the film. It's also shown that the fixed experimental condition which gives the most suitable initial nucleation density, and freely selectable deposition time provide us the controllability of the grain size. In conclusion, we have elucidated the novel way to control the grain size of the deposited films in CVD ceramics process. Less
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金 煕濱: "常圧熱CVDによるAlN膜合成における配向性の制御" 化学工学論文集. 18. 622-628 (1992)
Hee-bin Kim:“通过常压热 CVD 控制 AlN 薄膜合成中的取向”《化学工程杂志》18. 622-628 (1992)。
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L.-S.Hong: "Sticking Probability of the Film Precursor in Epitaxial Growth of SiC Films by Chemical Vapor Deposition from SiH_4 and C_3H_8" Proc.of the 12th International Symp.on CVD. 401-407 (1993)
L.-S.Hong:“SiH_4 和 C_3H_8 化学气相沉积法外延生长 SiC 薄膜中薄膜前驱体的粘着概率”第 12 届国际 CVD 研讨会论文集。
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小宮山 宏: "CVDハンドブック" 朝倉書店, 800 (1991)
小宫山浩:《CVD手册》朝仓书店,800(1991)
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L.-S.Hong: "Sticking Probability of the Film Precarsor in Epitaxial Growth of SiC Films by the mical Vapor Deposition from SiH_4 and C_3H_8." Proc.of the 12th International Symp.on CVD. 401-407 (1993)
L.-S.Hong:“通过 SiH_4 和 C_3H_8 的硅气相沉积外延生长 SiC 薄膜中薄膜前体的粘附概率”。
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A.Yanase: "In Situ Optical Obserbation of Oxygen-Adsorption-Induced Reversible Change in the Snape of Sinall-Supported Silver Particles." Surface Science. 264. 147-156 (1992)
A.Yanase:“氧吸附引起的 Sinall 支撑银颗粒斯内普可逆变化的原位光学观察。”
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共 17 条
THE CONSTRUCTION OF A CVD PROCESS WITH MATERIAL RECYCLE TO PRODUCE EFFICIENT SOLAR CELLS AT LOW-COST.
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批准号:08555186
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项目类别:Grant-in-Aid for Scientific Research (A)
-
资助金额:$8.26万
-
财政年份:1996
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负责人:KOMIYAMA Hiroshi
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依托单位:
CONTROL OF THIN-FILM FORMATION PROCESSES BY MONOLAYER TREATMENTS ON A SURFACE OF SUBSTRATES
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批准号:08405051
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项目类别:Grant-in-Aid for Scientific Research (A)
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资助金额:$18.82万
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财政年份:1996
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负责人:KOMIYAMA Hiroshi
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依托单位:
Analisys of CVD Process in Nano-Structured Ferro-Electric Thin Films
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批准号:06555232
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项目类别:Grant-in-Aid for Developmental Scientific Research (B)
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资助金额:$9.15万
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财政年份:1994
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负责人:KOMIYAMA Hiroshi
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依托单位:
Designe and Evaluation of the Afforestation of Desort by Water Controll
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批准号:06303007
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项目类别:Grant-in-Aid for Co-operative Research (A)
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资助金额:$6.91万
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财政年份:1994
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负责人:KOMIYAMA Hiroshi
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依托单位:
Monolayr Treatment of Silicon Surfaces for Controlling the lnitial Stages of Thin Film Preperation
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批准号:06453096
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项目类别:Grant-in-Aid for General Scientific Research (B)
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资助金额:$4.48万
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财政年份:1994
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负责人:KOMIYAMA Hiroshi
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依托单位:
海外基金