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Characterization at atomic level and nanoprocessing of material using high-voltage electron microscopy

Characterization at atomic level and nanoprocessing of material using high-voltage electron microscopy
使用高压电子显微镜进行原子级表征和材料纳米加工
批准号:
07305031
负责人:
SAKA Hiroyasu
金额:
$2.37万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (A)
财政年份:
1995
资助国家:
日本
项目状态:
已结题
起止时间:
1995 至 1996

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中文摘要
翻译
用原子分辨率表征了各种陶瓷的基本结构和微观结构。建立了一种用元素映射法表征材料的新方法。对鳗鱼光谱的精确分析导致了纳米区域的电子结构和元素分析的确定。氧在YBCO中的局域浓度是由临界电压效应决定的,在高分辨电子显微镜下观察到有序相在有序-无序转变中的形核和生长。动态观察了位错、点缺陷等缺陷的行为,以及晶体的熔化过程。为了改善金刚石薄膜的性能,对金刚石薄膜的纳米加工进行了尝试。还观察了材料的辐射损伤,观察了晶体表面的生长过程和电子束的溅射。研究了电子束辐照金属间化合物的无序化和非晶化过程,建立了电子束纳米表征方法。电子层析成像被应用于识别大规模集成电路及其纳米加工中的结构缺陷。
英文摘要
Fundamental structure and microstructure of a variety of ceramics was characterized on atomic resolution. A new method for characterization of materials by the element mapping was established. Precise analysis of EELS spectra led to determination of electronic structure and elemental analysis from nanometer regions. Local concentration of oxygen in YBCO was determined by the critical voltage effect.Nucleation and growth of the ordered phase in the order-disorder transition was observed by high resolution electron microscopy. Behavior of defects such as dislocations and point defects and also melting process of crystals were observed dynamically. Nano-processing of diamond thin foils was attempted to improve its performance. Radiation damage of materials was also observed.Growth process at the crystal surface and sputtering by electron beam were observed. Diordering and amorphitization of intermetallic compound by electron irradiation was studied and a method of nanocharacterization using an electron beam was established. Electron tomography was applied to identifying structural defects in LSI and its nanoprocessing.
期刊论文(24)
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会议论文
K.Suzuki,N.Maeda and S.Takeuchi: "High resolution electron microscopy of dissociated dislocations in silicon with a normal-incident electron beam" Philosophical Magazine, A. 73. 431-441 (1996)
K.Suzuki、N.Maeda 和 S.Takeuchi:“用法向入射电子束观察硅中解离位错的高分辨率电子显微镜”哲学杂志,A. 73. 431-441 (1996)
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通讯作者:
T.Kamino,T.Yaguchi,M.Tomita and H.Saka: "In-situ high-resolution electron microscopy study on a surface reconstruction of Au-deposited Si at very high temperature" Philosophical magazine,A. 75. 105-114 (1997)
T.Kamino、T.Yaguchi、M.Tomita 和 H.Saka:“极高温下 Au 沉积硅表面重建的原位高分辨率电子显微镜研究”哲学杂志,A。
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Ha-G.Jeong, K.Hiraga, M.Mabuchi and K.Higashi: "Interface structure of Si3N4-whisker reinforced Al-Mg-Si alloy studied by high resolution electron microscipy" Philosophiocal Magazine A. 74. 73-80 (1996)
Ha-G.Jeong、K.Hiraga、M.Mabuchi 和 K.Higashi:“通过高分辨率电子显微技术研究 Si3N4 晶须强化 Al-Mg-Si 合金的界面结构” 哲学杂志 A. 74. 73-80 (1996)
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通讯作者:
T.Kamino,H.Saka et al: "Dynamic observation of in situ sintering of SiC crystals at new atomic resolutin" Materials Transactions,JIM. 36. 73-75 (1995)
T.Kamino,H.Saka 等人:“新原子分辨率下 SiC 晶体原位烧结的动态观察”Materials Transactions,JIM。
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共 21 条
    The relation between the fracture toughness value and the nature of Si shuffle and glide dislocations around DBTT
    • 批准号:
      24560803
    • 项目类别:
      Grant-in-Aid for Scientific Research (C)
    • 资助金额:
      $3.49万
    • 财政年份:
      2012
    • 负责人:
      SAKA Hiroyasu
    • 依托单位:
    Analysis of a solid-liquid interface by means of an in-situ heating experiment in a HREM/analytical electron microscope
    • 批准号:
      14205092
    • 项目类别:
      Grant-in-Aid for Scientific Research (A)
    • 资助金额:
      $34.36万
    • 财政年份:
      2002
    • 负责人:
      SAKA Hiroyasu
    • 依托单位:
    Transmission electron microscope observation of cracks introduced in bulk crystals
    • 批准号:
      10305045
    • 项目类别:
      Grant-in-Aid for Scientific Research (A).
    • 资助金额:
      $24.13万
    • 财政年份:
      1998
    • 负责人:
      SAKA Hiroyasu
    • 依托单位:
    Contribution of in-situ experiment in a high resolution/analytical electron microscope to materials science.
    • 批准号:
      06402048
    • 项目类别:
      Grant-in-Aid for Scientific Research (A)
    • 资助金额:
      $24.7万
    • 财政年份:
      1994
    • 负责人:
      SAKA Hiroyasu
    • 依托单位:
    海外基金