Development of Photo-conductive Device with Electric Field Modulation Type using New Material of Layr Semiconductor

利用新型材料层流型化合物半导体的光导体器件的研究得到了基础性的发展。将新材料用于光学动态系统的光导体器件有望成为光电子学的发展方向。在本研究项目中，适合光导体的新材料是III-VI化合物半导体的GaS和GaSe。本文首先研究了射频溅射制备的GaS和GaSe薄膜的基本性质。这些薄膜被沉积在熔融二氧化硅和玻璃基板上。结果表明，在衬底温度为500 C时，溅射条件适宜的结晶GaSe薄膜结晶度良好；在衬底温度为500 C时，以Ar和H_2的混合物为溅射气体进行反应溅射的结晶GaSe薄膜。此外，我们还研究了用电子束沉积法制备的GaS和GaSe薄膜的基本性能，在300℃的衬底温度下电子束沉积得到了良好层型的晶体GaSe薄膜。半导体的生长工艺技术将引领光电子领域的新技术。特别地，我们得到了在衬底温度为300℃时，用电子束共沉积（Tb_2Cl_3, Sn 1wt%）制备的杂质掺杂的GaS薄膜的光电导率sigma_p。在实验中需要注意的是，室温下的无线光电导率sigma_p/暗电导率sigma_d约为10^3，因为这个值是实际应用中制备光导体的可能性所期望的。

The photoconductor device using new material laminar type compound semiconductor has been researched for fundamental development. The photoconductor device using new material for optical application to dynamic system is expected to be in the development of optelectronics. In this research and project, the new materials suitable for the photoconductor is GaS and GaSe of III-VI compound semiconductor. Fundamental properties of GaS and GaSe thin films prepared by RF spattering have been investigated first. These films have been deposited onto fused silica and glass substrates. It is found that crystalline GaSe films with good crystallinity with the appropriate sputtering conditiion at 500ﾟC of substrate temperature and crystalline GaS films with substrate temperature at 500ﾟC of reactive sputtering a mixture of Ar and H_2 as the sputtering gas. Furthermore, we have investigate of fundamental properties of GaS and GaSe thin films, prepared by electron beam deposition for those films, the crystalline GaSe films good layr type are obtained by electron beam deposition with substrate temperature at 300ﾟC.those the growth processes technigues of semiconductors are will lead to new technology in opt electronics.In specially, we obtain the photoconductivity sigma_p for the GaS thin films of the impurity doping prepared by electron beam Co-deposition (Tb_2Cl_3, Sn 1wt%) with substrate temperature at 300ﾟC.It should be noted here in experiment that the radio photoconductivity sigma_p/dark conductivity sigma_d takes about 10^3 around room temperature, because this value is expected for the possibility of photoconductor preparations in the practical application.