Establishment of Charging Free and Non-Scatter Implantation Technology for Micro Powders by Using Negative-Ion Beam
Establishment of Charging Free and Non-Scatter Implantation Technology for Micro Powders by Using Negative-Ion Beam
批准号:
08555172
负责人:
ISHIKAWA Junzo
金额:
$12.74万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (A)
财政年份:
1996
资助国家:
日本
项目状态:
已结题
起止时间:
1996 至 1997
中文摘要
1.粒子散射现象和阈值充电电压的解释在没有任何电荷补偿的常规正离子注入过程中,粉末的散射是由高充电电压引起的。考虑到作用在上层粒子上的库仑排斥力和对下层粒子的吸引力,如重力和货车德瓦尔斯力,推导了稳态和振动态下散射的阈值充电电压。实验证实了这种关系。2.无散射搅拌式粉体负离子注入机的研制我们研制了一台带有离子束偏转器和频率为120 Hz的电磁振荡器搅拌器的粉体负离子注入机。用该装置以70 keV的能量将各种负离子注入到粉末中,没有观察到散射现象。The Bottom ...更多信息 离子注入是一种无散射的粉末注入方法。3.负离子注入时绝缘体充电表面电位的评估我们用二次电子能量分析法测量了几种绝缘体的表面电位。在负离子注入过程中,表面电位只有几伏负,远低于阈值电压。因此,散射被认为不会导致负离子扩散。4.用于处理粉末颗粒的整个表面的振动搅拌方法的建立对于振动搅拌,从理论上驱动所需的频率和振幅条件。通过振动实验确定了振动条件。为了评价均匀性,将铜负离子注入玻璃珠中。通过XPS分析,发现振动下的负离子注入能使整个表面得到均匀的处理,从而研制了一种粉体负离子注入装置,确立了粉体负离子注入是一种无电荷、无散射、均匀性好的离子注入方法。少
英文摘要
1.Elucidation of Particle-Scattering Phenomenon and Threshold Charging VoltageScattering of powders during conventional positive-ion implantation without any charge compensation results from a high charging voltage. Taking account of forces acting on one particle in the top layr : Coulomb repulsive force and attractive forces to other particles in the layr just below, such as gravity and van der Waals force, the threshold charging voltage for scattering was derived for a stationary state and a vibrated state. This relation was confirmed by experiments. Thus, we have clarified the mechanism of particle scattering.2.Development of Negative-Ion Implanter for Powders with an Agitator and Non-ScatteringWe constructed a negative-ion implantation for micro-powders as equipped with ion beam bending deflector and an agitator of electromagnetic vibrator at a frequency of 120 Hz. With this implanter, various negative ions were implanted into powders at 70 keV.No scattering was observed. The negat … More ive-ion implantation is found a nonscattering implantation method for powders.3.Evaluation of Charging Surface Potential of Insulators at Negative-Ion ImplantationWe measured surface potentials of several kinds of insulators by secondary electron energy analysis. The surface potential during negative-ion implantation was only several volts negative much less than threshold voltage. Therefore, scattering is considered to not result in negative-ion implantation.4.Establishment of Agitation Method by Vibration for Treatment of Whole Surface of Powder-ParticlesFor agitation by vibration, required conditions of frequency and amplitude were theoretically driven. The conditions were confirmed by vibration experiments. For evaluation of uniformity, copper negative ions were implanted into glass beads. From contents of copper atoms in a bead by XPS,the implantation under the vibration was found to make treatment of whole surface with good uniformity.Thus, we developed a negative-ion implanterfor powders and established negative-ion implantation into powders as a charging free and non-scattering ion implantation method with a good uniformity. Less
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Junzo Ishikawa: "Negative-Ion Sources for Modification of Matherials (invited)" Review of Scientific Instruments. Vol.67. 1410-1415 (1996)
Junzo Ishikawa:“用于材料改性的负离子源(特邀)”科学仪器评论。
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通讯作者:
Junzo Ishikawa: "Non-Scattering Technique of Ion Implantation into Powders of Micro-Beads by Using Negative Ions" (to be published in Surface Coatings and Technology). 6ページ (1998)
Junzo Ishikawa:“使用负离子将离子注入微珠粉末的非散射技术”(将发表在《表面涂层与技术》上),第 6 页(1998 年)。
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Junzo Ishikawa: "Study on Emission Yields of Negative- and Positive-Ion Induced Secondary Electron from Thin SiO_2 Film" Nuclear Instruments and Methods. B127-128. 278-281 (1997)
Junzo Ishikawa:“SiO_2 薄膜负离子和正离子诱导二次电子发射产率的研究”核仪器和方法。
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Junzo Ishikawa: "Application of Negative Ions to Industrial Field" Journal of Plasma and Nuclear Fusion Science Soc.of Japan. Vol.72. 1144-1149 (1993)
石川淳三:《负离子在工业领域的应用》日本等离子体核聚变学会杂志。
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Hiroshi Tsuji: "Negative-Ion Extraction of Gaseous Materials from a Radio Frequency Plasma-Sputter-Type Heavy Negative-Ion Source" Review of Scientific Instruments. Vol.67. 1012-1014 (1996)
Hiroshi Tsuji:“从射频等离子体溅射型重负离子源中提取气态材料的负离子”科学仪器评论。
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共 28 条
Development of Nitride and Carbide Cathodes for Realization of Highly Stable Vacuum Micro Electron Sources
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批准号:12135204
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项目类别:Grant-in-Aid for Scientific Research on Priority Areas
-
资助金额:$17.98万
-
财政年份:2000
-
负责人:ISHIKAWA Junzo
-
依托单位:
Ion Beam Processing of Polymeric Biomaterials
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批准号:11694148
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项目类别:Grant-in-Aid for Scientific Research (B).
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资助金额:$3.01万
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财政年份:1999
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负责人:ISHIKAWA Junzo
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依托单位:
Negative-Ion Beam Material Processing Techniques
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批准号:08044140
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项目类别:Grant-in-Aid for international Scientific Research
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资助金额:$3.84万
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财政年份:1996
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负责人:ISHIKAWA Junzo
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依托单位:
Development of Charge-up Free lon lmplantation by Using Negative lon Beam
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批准号:05555008
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项目类别:Grant-in-Aid for Developmental Scientific Research (B)
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资助金额:$10.62万
-
财政年份:1993
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负责人:ISHIKAWA Junzo
-
依托单位:
Establishment of the Negative-Ion Beam Technology for Material Modification
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批准号:05402027
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项目类别:Grant-in-Aid for General Scientific Research (A)
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资助金额:$19.2万
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财政年份:1993
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负责人:ISHIKAWA Junzo
-
依托单位:
Development of Negative-Ion-Beam Techniques for Film Formation and Crystallinity Control
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批准号:61460065
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项目类别:Grant-in-Aid for General Scientific Research (B)
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资助金额:$4.22万
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财政年份:1986
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负责人:ISHIKAWA Junzo
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依托单位:
海外基金