Electrochemistry and pore formation in III-V compounds

拟议的项目旨在结合III-V化合物（摩尔达维亚）和Si（德国）的详细电化学知识，以更详细地了解一般的界面过程，特别是孔蚀刻。实验工作将集中在基尔；摩尔达维亚提供了一位经验丰富的博士生、标本和III-V专业知识。该项目首先采用在基尔为Si开发的通用模型的方法和工具以及合适的组件，对III-V化合物的电化学特性进行彻底调查。III-V材料的首次实验已经成功，并验证了该方法。目的是提高对III-V电化学的一般理解，并找到允许产生类似于众所周知的Si宏观和介孔的孔隙结构和形态的蚀刻条件。在这种情况下，光子晶体的生产是一个特定的目标。预计III-V和Si刻蚀专家的密切合作也将产生一些Si孔刻蚀的衍生产物，尽管比III-V化合物研究得更彻底，但仍然没有很好地理解。

The proposed project aims at combining the detailed knowledge about the electrochemistry of III-V compounds (Moldavia) and Si (Germany) for a more detailed understanding of the interface processes in general and pore etching in particular. Experimental work will be focussed in Kiel; Moldavia supplies an experienced PhD student, specimens and III-V know-how. The project starts with a thorough investigation of electrochemical specifica in III-V compounds employing the methods and tools as well as suitable components of a general model developed in Kiel for Si. First experiments with III-V materials have been successful and validate the approach. The aim is to improve the general understanding of III-V electrochemistry and to find etching conditions which allow to generate pore structures and morphologies similar to the well known macro- and mesopores in Si. The production of photonic crystals is a specific goal within this context. It is expected that the close collaboration of III-V and Si etching specialists will generate some spin-off for the pore etching in Si, too, which, although much more thoroughly investigated than III-V compounds, is still not understood very well.