Preparation of two and three dimensional photonic crystals in Si and III-V semiconductors by pore etching

通过孔刻蚀制备 Si 和 III-V 半导体中的二维和三维光子晶体

• 批准号: 5316426
• 负责人: Professor Dr. Helmut Föll
• 金额: --
• 依托单位: Lehrstuhl für Allgemeine Materialwissenschaft
• 依托单位国家: 德国
• 项目类别: Priority Programmes
• 财政年份: 2001
• 资助国家: 德国
• 起止时间: 2000-12-31 至 2005-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/5316426?language=en
• 关键词: Preparation; two; three; dimensional; photonic

The goal of the project is to improve the preparation of photonic crystals in Si by exploring the many new modes of pore etching discovered during the last few years, to try several possible modes of pore etching for the preparation of threedimensional photonic crystals in Si, and to try for the first time to produce two and three dimensional photonic crystals with III-V compounds. The work proposed is based on several unique features of pore etching in Si and particularly in GaAs, GaP and InP found in the previous research of the Kiel group.

该项目的目的是通过探索过去几年中发现的许多新孔蚀刻模式来改善SI中的光子晶体的制备，以尝试几种可能的孔蚀刻模式，以制备SI中的三个二二酮光子晶体，并首次尝试与III-II-VInsunds一起产生两和三二二二位光子晶体。提出的工作是基于SI中的孔隙蚀刻的几个独特特征，尤其是在Kiel Group先前研究中发现的GAA，GAP和INP中。