Development of precision goniometer compatible with oxygen atmosphere and ultrahigh temperature for surface analyses of pulsed laser deposition oxide thin films
Development of precision goniometer compatible with oxygen atmosphere and ultrahigh temperature for surface analyses of pulsed laser deposition oxide thin films
批准号:
10555308
负责人:
KAWASAKI Masashi
金额:
$8.77万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (B)
财政年份:
1998
资助国家:
日本
项目状态:
已结题
起止时间:
1998 至 1999
中文摘要
这项研究的目标是开发一种精密测角仪,它可以在从特高压到大气压的任何给定氧压的环境中处理样品,在超过1000℃的高温下,没有任何磁场噪声,如果样品通过电流加热会引入任何磁场噪声。因此,我们选择了激光作为热源,在第一年,我们研制了简单的加热台和光学装置,用一束连续的激光实现了1400℃的最高加热温度。在第二年,设计和制造了特殊的光纤和光学元件,以适应这项技术的六轴运动的测角仪。使样品台在高温下平稳旋转的轴承是这项研究中最困难的部分。最后,我们可以制作出具有所建议规格的测角仪。
英文摘要
The goal of this study is to develop a precise goniometer which can handle the specimen in an environment of any given oxygen pressure from UHV to atmospheric pressure at an elevated temperature of over 1000℃ without any magnetic field noise which would be introduced if the specimen is heated by electric current. Therefore, we chose laser beam as a heat source, In the first year, we have developed simple heating stage and optics for using a cw Nd:YAG laser beam to accomplish highest heating temperature of 1400℃. In the second year, special optical fiber and optics were designed and fabricated to fit this technique to a goniometer having 6-axis motion. The bearings which allow the sample stage to rotate smoothly at high temperature was the most difficult part of this study. Finally, we could fabricate the goniometer having the proposed specification.
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M. Lippmaa: "Growth mode control of SrtiO_3 epitaxy"Proceedings of the third Synposium on Atomic Scale Surface and Interface dynamics. 3. 171-174 (1999)
M. Lippmaa:“SrtiO_3外延的生长模式控制”第三届原子尺度表面和界面动力学研讨会论文集。
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S. Ohashi: "Compact laser molecular beam epitaxy system using laser heating of substrat for oxide film growth"Rev. Sci. Instrum.. 70. 178-183 (1999)
S. Ohashi:“利用激光加热衬底进行氧化膜生长的紧凑型激光分子束外延系统”Rev.
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M. Lippmaa: "Dynamics of SrTiOィイD23ィエD2 surface during wet etching and high-temperature annealing"Ferroelectrics. 224. 373-378 (1999)
M. Lippmaa:“湿法蚀刻和高温退火过程中 SrTiO2 表面的动力学”铁电体 224. 373-378 (1999)。
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M.Lippmaa: ""Step-flow growth of SrTiO_3 thin films with a dielectric constant exceeding 10^4""Appl.Phys.Lett.. 74. 3543-5345 (1999)
M.Lippmaa:“介电常数超过 10^4 的 SrTiO_3 薄膜的步进流生长”Appl.Phys.Lett.. 74. 3543-5345 (1999)
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M. Lippmaa: "Step-flow growth of SrtiO_3 thin films with a dielectric constant exceeding"Appl. Phys. Lett.. 74. 3543-5345 (1999)
M. Lippmaa:“介电常数超过的SrtiO_3薄膜的步进流生长”Appl。
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共 21 条
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