Real time analysis on the growing crystal surface by X-ray scattering at small glancing angle incidence
Real time analysis on the growing crystal surface by X-ray scattering at small glancing angle incidence
批准号:
11650016
负责人:
FUJII Yoshikazu
金额:
$2.37万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (C)
财政年份:
1999
资助国家:
日本
项目状态:
已结题
起止时间:
1999 至 2000
中文摘要
我们对PbSe(111)表面的外延生长进行了原位观测,并在旋转阳极源的情况下,成功地观察到了镜面反射X射线强度的振荡,显示了表面的逐层生长。但对于晶体生长的监测来说,振荡的幅度很小。在此基础上,构建了一套新的X射线散射能量二维角分布测量系统。我们还估算了镜面反射X射线和散射X射线在另一个角度上的强度比,在不同的入射角度和不同的散射角度下,用基于动态散射理论的模拟模型计算了强度振荡的幅度。寻找了散射X射线强度振荡幅度变大的最合适条件。在与全反射临界角相同的入射角度下,振幅增长最大。设计并启动了X射线能量二维探测系统。用SC、SSD三种探测容器和X射线能量二维探测系统测量了铁表面散射的X射线分布,并进行了对比实验。为了使1个光子的X射线在单元盒中发光,发现可以测量被测X射线的能量。提出了降低暗电流噪声、降低光子能量测量的最佳测量条件。此外,还对X射线进行了实验研究,发现了利用新型X射线显微镜对材料表面进行观察的可能性。
英文摘要
We have performed in situ observation of the epitaxial growth of PbSe (111) surfaces, and the oscillation of the specularly reflected X-ray intensity showing the layer-by-layer growth of the surface was successfully observed even using a rotating-anode source. But the amplitudes of the oscillation were very small to utilize the monitor of crystal growth. Then we constructed a new measurement system of two-dimensional angular distribution of scattered x-ray energy. We also estimated the intensity ratios between the specularly reflected X-rays and the scattered X-rays at another angle.About various incident angles and various scattered angels, the amplitudes of the intensity oscillations were calculated with simulation models based on dynamical scattering theory. The most suitable condition that the amplitude of the oscillation of the scattered X-ray intensity grew big was looked for. The amplitude grew the biggest at the incident angle as same as the critical angle of the total reflection as that result."An x-ray energy two-dimensional detection system" was designed and started. The X-ray distribution that it was scattered from the surface of the iron was measured with three kinds of detection vessels of SC, SSD and the X-ray energy two-dimensional detection system, which used a CCD element, and a comparative experiment was done. To make the amount of light of 1 photon of the X-ray shine in 1 element cell of CCD, it was found out that energy of the detected X-ray could be measured. And, the idea for the most suitable measurement condition of CCD for the energy measurement of photon, dark electric current noise to be reduced was asked. Moreover, some experiments by CCD of the X-ray were done, and the possibility of the new X-ray microscope, which can be observed the surface of the material, was found.
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Y.Fujii: "Small Angel Glancing X-ray Scattering for Surface Characterization of Ion-Implanted Industrial Materials"Ion Implantation Technology-98. 1. 1121-1124 (1999)
Y.Fujii:“用于离子注入工业材料表面表征的小天使掠射X射线散射”离子注入技术-98。
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Y.Fujii: "Small Angle Glancing X-ray Scattering for Surface Characterization of Ion-Implanted Industrial Materials"Ion Implantation Technology-98. 1. 1121-1124 (1999)
Y.Fujii:“用于离子注入工业材料表面表征的小角度掠射X射线散射”离子注入技术-98。
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藤居義和: "超高真空表面X線回折装置による結晶成長表面のその場観察"神戸大学ベンチャー・ビジネス・ラボラトリー年報. 4. 75-80 (1999)
Yoshikazu Fujii:“使用超高真空表面 X 射线衍射仪对晶体生长表面进行原位观察”神户大学创业商业实验室年度报告 4. 75-80 (1999)。
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Y.Fujii and Kentaroh Yoshida: "In situ observation of growing crystal surfaces by a compact UHV x-ray diffractometer for surface glancing scttering"Annual Report of Venture Business Laboratory, Kobe University. Vol.4. 75-80 (1999)
Y.Fujii 和 Kentaroh Yoshida:“通过用于表面掠射散射的紧凑型 UHV X 射线衍射仪对生长晶体表面进行原位观察”神户大学创业商业实验室的年度报告。
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通讯作者:
藤居義和: "超高真空表面X線回折装置による結晶成長表面のその場観察"神戸ベンチャー・ビジネス・ラボラトリー年表. 4. 75-80 (1999)
Yoshikazu Fujii:“使用超高真空表面 X 射线衍射仪对晶体生长表面进行原位观察”神户创业商业实验室年表。 4. 75-80 (1999)。
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共 6 条
In-situ analysis of the growing surface by two dimensional detection of x-ray scattering at small glancing angle incidence
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批准号:13650012
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$2.11万
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财政年份:2001
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负责人:FUJII Yoshikazu
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依托单位:
In-situ observation of the crystal growth process by X-ray scattering at small glancing angle incidence
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批准号:09650016
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$1.92万
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财政年份:1997
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负责人:FUJII Yoshikazu
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依托单位:
Investigation of the growing surfaces of crystal by X-ray scattering at small glancing angle incidence
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批准号:07650015
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$1.28万
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财政年份:1995
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负责人:FUJII Yoshikazu
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依托单位:
海外基金