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Computer Simulation of the Control of Electroplating

Computer Simulation of the Control of Electroplating
电镀控制的计算机模拟
批准号:
11650066
负责人:
KANEKO Yutaka
金额:
$1.92万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (C)
财政年份:
1999
资助国家:
日本
项目状态:
已结题
起止时间:
1999 至 2000

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中文摘要
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英文摘要
In this work, the surface structure of thin film deposited on a metal surface, the formation of defects within the film and the control of the surface growth have been studied using computer simulation methods. As a model of solution growth, we extended a basic Solid-on-Solid (SOS) model so that vacancies are created in the film during the growth and performed Monte Carlo simulations for a two-dimensional square lattice. Following results are obtained.1. The surface changes from a layer structure to a rough structure and the density of defects increases as the chemical potential (overpotential in electrodeposition) becomes large. For large overpotential, the nucleation occurs everywhere on the surface and the surface has a fine structure. These results correspond to experimental findings.2. Point defects (single vacancies) appear in the film when the surface has a layer structure. When the surface becomes rough, large voids are formed as well as point defects. The vacancies are created when hollow parts of the surface are filled with deposited atoms. The history of the surface growth is reflected in the void structure.3. When the surface has vias, voids are created and aligned in the direction of the growth. This will produce a pinhole in the film, resulting in the decrease in the corrosion resistance. Voids are also formed when the initial surface has trenches, corresponding to experimental copper deposition for interconnects.4. The simulations of heat treatment are also performed. The surface diffusion is enhanced when the temperature is high, and the roughness of the surface decreases.We also studied the mixing of two liquids (chaos mixing), and developed efficient Monte Carlo simulation algorithm by applying an importance sampling method.
期刊论文(7)
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会议论文
Kaneko, Yutaka: "Monte Carlo Simulation of Thin Film Growth with Lattice Defects"Journal of the Physical Society of Japan. Vol. 69, No. 11. 3607-3613 (2000)
Kaneko, Yutaka:“带有晶格缺陷的薄膜生长的蒙特卡罗模拟”日本物理学会杂志。
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通讯作者:
Kaneko,Yutaka: "Surface Structure and Void Formation in Thin Film Growth : A Monte Carlo Simulation"Progress of Theoretical Physics Supplement. (発表予定). (2000)
Kaneko, Yutaka:“薄膜生长中的表面结构和空隙形成:蒙特卡罗模拟”理论物理进展补充(即将发表)。
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Kaneko,Yutaka: "Computer Simulation of Crystal Growth and Void Formation"Statistical Physics -Proceedings of Third Tohwa University International Conterence-. 575-577 (2000)
Kaneko,Yutaka:“晶体生长和空隙形成的计算机模拟”统计物理学-第三届东和大学国际会议论文集-。
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通讯作者:
Kaneko,Yutaka: "Monte Carlo Simulation of Thin Film Growth with Lattice Defects"Journal of the Physical Society of Japan. 69. 3607-3613 (2000)
Kaneko,Yutaka:“带有晶格缺陷的薄膜生长的蒙特卡罗模拟”日本物理学会杂志。
DOI: --
发表时间:
期刊:
影响因子: --
作者: []
通讯作者:
7
    Development and Application of Multi-scale Simulation System for the Fabrication of Through Silicon Via
    • 批准号:
      23560067
    • 项目类别:
      Grant-in-Aid for Scientific Research (C)
    • 资助金额:
      $3.49万
    • 财政年份:
      2011
    • 负责人:
      KANEKO Yutaka
    • 依托单位:
    Studies on the Hybrid Simulation System of Molecular Dynamics and Monte Carlo Methods for Electrodeposition
    • 批准号:
      18560059
    • 项目类别:
      Grant-in-Aid for Scientific Research (C)
    • 资助金额:
      $2.46万
    • 财政年份:
      2006
    • 负责人:
      KANEKO Yutaka
    • 依托单位:
    海外基金