Development of zirconia film oxygen sensor controlled with piezoelectric material

在本研究中，利用压电装置产生的振动，成功地开发了工作在低温下的氧离子传感器，改善了yttoria稳定氧化锆（YSZ）的电导率。以Zr(DPM)_4和Y(DPM)_3为酱料，采用MOCVD法制备了YSZ薄膜。YSZ薄膜具有离子导电性，因为在复阻抗测量中，在低频和高频上分别允许半圆和尖峰。采用射频溅射法制备了压电材料锆钛酸盐（PZT）薄膜，研究了实验条件、结构和形貌与薄膜铁电特性的关系。以Ba(DPM)_2和Ti(O-i-C_3H_7)_2(DPM)_2为酱料，采用MOCVD法制备了钛酸钡（BTO: BaTiO_3）薄膜。制备了由YSZ/BTO/Pt/MgO薄膜组成的离子传导/压电多功能薄膜。BTO的形貌致密，YSZ的形貌呈柱状。制备了YSZ/压电多功能薄膜，研究了压电振动对YSZ薄膜电特性的影响。(1) YSZ薄膜的阻抗随压电振动幅值的增大而减小。(2)受压电振动（频率115kHz，电压40V）的YSZ薄膜电导率约为2×10^<-6>Ω^<-1>m^<-1>。在90℃。该电导率值比无振动的YSZ薄膜的电导率高一位数或更多。认为利用压电振动可以提高YSZ薄膜的导电性。压电振动提高YSZ电导率的原因目前正在研究中。

In this research, it succeeded in the improvement of electric conductivity of yttoria stabilized zirconia (YSZ) by using the vibration caused by a piezoelectric device to develop the oxygen ion sensor which worked at the low temperature.1. YSZ thin film was prepared by the MOCVD method used Zr(DPM)_4 and Y(DPM)_3 as sauces. The YSZ film had the ionic conduction because the semicircle and the spike had been admitted on the low frequency and the high frequency respectively in the complex impedance measurement.2. Read zirconate titanate (PZT) films which was the piezoelectric material were prepared by RF-sputtering method, and the relationship between experimental conditions, structure, and morphology and the ferroelectric characteristic of the films were investigated.3. Barium titanate (BTO : BaTiO_3) films were prepared by MOCVD using Ba(DPM)_2 and Ti(O-i-C_3H_7)_2(DPM)_2 as sauces. The ionic-conduction/piezoelectric multi-functional film composed of the YSZ/BTO/Pt/MgO film was fabricated. The morphology of BTO was compact, and of YSZ was a columnar-shaped structure.4. The YSZ/piezoelectric multi-functional film was fabricated, and the effect of the piezoelectric vibration on the electric characteristic of the YSZ film were investigated.(1) The impedance of the YSZ thin film was decreased with increasing amplitude of the piezoelectric vibration.(2) Conductivity of the YSZ thin film vibrated by the piezoelectric vibration (frequency 115kHz, 40V in the voltage) conductivity is about 2×10^<-6>Ω^<-1>m^<-1>.at 90℃. The value of this conductivity was about one digit or more higher than that of the no vibration YSZ thin film. It was suggested to be able to increase conductivity of the YSZ thin film by the piezoelectric vibration.The reason that conductiveity of YSZ increases by the piezoelectric vibration is researching now.