Formation of Nanostructured Si-Ge alloy Thin Film Using an Organometallic Polymer as a precursor and the Optical and Electrical Properties

本研究的目的是以有机硅和锗纳米团簇为前驱体，制备纳米结构的硅锗合金薄膜。这种纳米结构的硅锗合金薄膜有望显示出独特的光学和电学性能。有机硅和锗纳米簇是有机金属聚合物，其具有分别被有机基团取代的Si和Ge簇核，并且有机基团赋予它们对普通有机溶剂的溶解性。由于有机硅和有机锗纳米团簇的可溶性，可以通过旋涂技术制备出由有机硅和有机锗纳米团簇组成的层状薄膜。有机硅和有机锗单体的嵌段共聚也得到了纳米结构的硅锗合金聚合物。它们的拉曼光谱显示出归属于Si-Si、Si-Ge和Ge-Ge键振动的特征谱带。Si-Ge共聚物的组成与有机硅和有机硅的单体进料组成相对应 ...更多信息 非锗单体。采用有机硅纳米团簇、有机锗纳米团簇和硅锗嵌段共聚物复合的方法制备了硅锗合金无机薄膜。利用激光诱导热分解技术将有机高分子转化为无机薄膜。用Ar离子激光器将激光束聚焦到有机锗纳米团簇薄膜上，使其转变为微晶锗（μc-Ge）薄膜。利用x-y-z工作台控制器进行激光束扫描，得到分辨率约为1 μm的μc-Ge微图形。另一方面，由有机硅纳米团簇形成无机膜需要具有较大能量密度的脉冲激光的照射。通过激光诱导热解有机硅和有机锗纳米团簇的层状薄膜，可以获得具有纳米结构的硅锗合金薄膜。/有机硅纳米团簇层状薄膜提供了一种形成硅锗合金的新方法。少

In this study, our purpose is the formation of the nanostructured silicon-germanium (Si-Ge) alloy films using organosilicon and germanium nanocluster as precursors. Such Si-Ge alloy films are expected to show unique optical and electrical properties owing to the nanostructure. The organosilicon and germanium nanoclusters are organometallic polymers which have a Si and Ge duster core substituted with organic groups, respectively, and the organic groups give them the solubility to common organic solvents. The layered film consisting of organosilicon and organogermanium nanocluster can be prepared by spin-coating technique due to the solubility. The block copolymerization of organosilicon and organogermanium monomers also gave the nanostrucured Si-Ge alloy polymers. The Raman spectra of them shows characteristic bands assigned to the vibrations of Si-Si, Si- Ge and Ge-Ge bonds. The compositions of the Si-Ge copolymers corresponded to the monomer feed compositions of organosilicon and Orga … More nogermanium monomers. Inorganic thin films of Si-Ge alloys were prepared by the combination of organosilicon nanocluster, organogermanium nanocluster and Si-Ge block copolymers. The conversion of the organometalic polymers into inorganic films were carried out by using laser-induced pyrolysis technique. The organogermanium nanocluster film was easily converted into microcryatalline Ge (μc-Ge) film by the irradiation of an Ar ion laser, where laser beam was focused on the precursor film by using an objective lens. The laser beam scan using x-y-z stage controller gave a micropattern of μc-Ge with a resolution of ca.1μm. On the other hand, the formation of inorganic film from the organosiliconl nanocluster needs the irradiation of a pulsed laser which have larger energy density. The formation of Si-Ge alloy film with a nanostructure can be achieved by the laser-induced pyrolysis of the layered film of organosilicon and organogermanium nanoclusters. /organosilicon nanocluster layered film providers a novel method to form a Si-Ge alloy. Less