Research and Development on High Resolution TDC for Space Experiments
Research and Development on High Resolution TDC for Space Experiments
批准号:
16340081
负责人:
ARAI Yasuo
金额:
$7.3万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (B)
财政年份:
2004
资助国家:
日本
项目状态:
已结题
起止时间:
2004 至 2006
中文摘要
本研究旨在研究和开发基于我们的高分辨率TDC(Time-to-Digital Converter)技术的高能和空间实验测量LSI。这种大规模集成电路必须具有很高的温度、冲击和辐射可靠性。所开发的大规模集成电路计划用于2013年发射的比埃科伦坡水星探测器。去年在台积电CMOS0.18um上加工的两级锁相环测试芯片存在I/O缓冲区故障,未完全用于评估。然而,在OKI 0.15um SOI(绝缘体上硅)中加工的TEG(测试元件组)芯片在像素传感器和晶体管阵列中显示出良好的效果。它们在东北大学回旋加速器上被10^15(~100 Mrad)的质子束辐照,通过调节背栅电压,显示出足够的辐射硬度,可用于空间应用。SOI工艺有望成为未来大规模集成电路的主流技术,具有辐射硬度高、工作温度高、功耗低的特点。除了上述结果外,我们之前的TDC芯片(TMC304)在东芝0.3um CMOS中处理,安装在月球探测器Selene上。我们确信它将从月球上发送有价值的数据
英文摘要
This research has aimed for research and development of measurement LSI for high-energy and space experiments based on our high-resolution TDC (Time-to-Digital Converter) technology. This LSI must have high reliability for temperature, shock, and radiation. The developed LSI is planned for use in BepiColombo Mercury explorer which is planned on launch in 2013.A test chip of two stages PLL (Phase Locked Loop), processed last year in TSMC CMOS 0.18um, has a fault in I/O buffer area, and not fully used for evaluation. However, a TEG (Test Element Group) chip processed in OKI 0.15 um SOI (Silicon-On-Insulator) showed good results in pixel sensor and transistor array. They are irradiated by proton beam of 10^15 (〜100Mrad) at Tohoku University Cyclotron, and revealed enough radiation hardness for space use by adjusting back gate voltage.SOI process is expected to be main stream technology for future LSI, and has good characteristics of radiation hardness, high-temperature operation, and low power. These are especially preferable in high-energy and space experiments.In addition to above results, our previous TDC chip (TMC304), which was processed in Toshiba 0.3 um CMOS, was installed in lunar explorer SELENE. We are sure it will send valuable data from the moon
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On-chamber Readout System for the A TLAS MDT Muon Spectrometer
A TLAS MDT Mu 子光谱仪的室内读出系统
DOI:
--
发表时间:
2004
期刊:
IEEE Transactions on Nuclear Science Volume: 51 Issue: 5
影响因子:
--
作者:
[Y.Arai, et al.]
通讯作者:
et al.
First Results of 0.15um CMOS SOI Pixel Detector
0.15um CMOS SOI 像素探测器的初步结果
DOI:
--
发表时间:
2006
期刊:
SLAC Electronic Conference Proceedings Archive C0604032
影响因子:
--
作者:
[Y.Arai, et al.]
通讯作者:
et al.
Radiation Qualification of Electronics Components Used for the ATLAS Level-1 Muon Endcap Trigger System
用于 ATLAS 1 级 μ 子端盖触发系统的电子元件的辐射鉴定
DOI:
--
发表时间:
2005
期刊:
IEEE Transactions on Nuclear Science 52
影响因子:
--
作者:
[A.Abdesselam, Y.Ikegami, I.Nakano, S.Terada, et al., K.Hara et al., A.Abdesselam et al., R.B.Nickerson et al., Y.Unno, F.Campabadal et al., K.Hara et al., Y.Unno et al., S.Terada et al., Y.Unno et al., R.Ichimiya et al.]
通讯作者:
R.Ichimiya et al.
R & D of a pixel sensor based on 0.15 μm fully depleted SOI technology
基于0.15μm全耗尽型SOI技术的像素传感器研发
DOI:
--
发表时间:
2007
期刊:
Nuclear Instruments and Method A (in press)
影响因子:
--
作者:
[T.Tsuboyama, Y.Arai et al.]
通讯作者:
Y.Arai et al.
2つのPLLを用いた微小時間差回路及び時間測定回路
使用两个PLL的微时差电路和时间测量电路
DOI:
--
发表时间:
2004
期刊:
影响因子:
--
作者:
[]
通讯作者:
共 7 条
Research on Thin Pixel Detector with SOI Technology for High-rate Experiments
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批准号:21244040
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项目类别:Grant-in-Aid for Scientific Research (A)
-
资助金额:$25.71万
-
财政年份:2009
-
负责人:ARAI Yasuo
-
依托单位:
Research on Radiation Tolerant LSIs for High-Intensity Accelerator Experiments
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批准号:13640310
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$2.05万
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财政年份:2001
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负责人:ARAI Yasuo
-
依托单位:
PREPARATION OF BIOMATERIAL ON AMORPHOUS CALCIUM PHOSPHATE AND PROTEIN COMPOSITES
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批准号:08305035
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项目类别:Grant-in-Aid for Scientific Research (A)
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资助金额:$6.59万
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财政年份:1996
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负责人:ARAI Yasuo
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依托单位:
RESOURCES RECYCLING AND ITS UTILIZATION OF CONCRETE AND GYPSUM BOARD WASTE
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批准号:07455351
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$3.78万
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财政年份:1995
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负责人:ARAI Yasuo
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依托单位:
海外基金